Texas Tech University System

Ac Led Lighting, L.l.c.

Kansas State University Research Foundation

Iii-n Technology, Inc.

Other

Hongxing Jiang

Jingyu Lin

Jing Li

Zhaoyang Fan

Sixuan Jin

Changzhi Li

Avisek Maity

Sam Grenadier

Jacob Day

John M Zavada

Yaqiong Yan

Donald Lie

Sashikanth Majety

Cris Ugolini

Tom N Oder

Rajendra Dahal

Zhenyu Sun

Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×10atoms/cmand 1×10atoms/cmcan be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.

Optical gain materials for high energy lasers and laser illuminators and methods of making and using same

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich InGaN/GaN multiple quantum wells (MQWs). In-rich InGaN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

Semiconductor optical phased arrays (OPA's) and methods related thereto

A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-BN or h-BN orBN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-BN or h-BN orBN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

Solid-state neutron detector

The present invention relates to optoelectronic device layer structures, light emitting devices, and detectors based upon heterostructures formed between hexagonal boron nitride (hNB) and III nitrides, and more particularly, to heterojunction devices capable of emitting and detecting photons in the ultraviolet (UV) and extremely ultraviolet (RUV) spectral range. The present invention also relates to neutron detectors based on epitaxially grown hBN thin films (or epitaxial layers) and hBN stacked thin films (or epitaxial layers) to satisfy the thickness required for capturing all incoming neutrons.

Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures

An active matrix microdisplay system is provided. The microdisplay system includes an array of micro-emitters. The microdisplay system also includes an array of CMOS driving circuits. Each of the CMOS driving circuits is coupled to a respective micro-emitter for controlling current to each respective micro-emitter. Each driving circuit includes metal-oxide-semiconductor field-effect transistor (MOSFET) devices, where the MOSFET devices comprise p-type metal-oxide-semiconductors (PMOSs) or n-type metal-oxide-semiconductors (NMOSs).

CMOS IC for micro-emitter based microdisplay

A solid-state LED lighting lamp (SSL-LED lamp), based on AC or DC-emitters, which runs under a high AC or DC voltage, with high light generation capability, high reliability and long lifespan, is disclosed. A plurality of AC or DC-emitter chips are integrated on a thermally conductive submount and the electrically conductive element pathways on the submount provide electrical interconnections between the mounted chips and also between the individual LEDs on each chip. The conducting elements also provide redundant current paths at the AC or DC-emitter chip level and individual LED level. Depending on the detail design, the LED SSL-lamp may be directly powered by an AC voltage (i.e. 110/120V or 220/240V power grid) or a high DC voltage. With this design, the LED SSL-lamp can provide sufficient illumination to replace the incandescent or florescent light bulbs for general lighting purpose. The distributed emitter array design ensures the heat dissipation. The redundant current path design ensures the long lifespan and high reliability.

Light emitting diode lamp capable of high AC/DC voltage operation

This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 &#x3bc;m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.

Er doped III-nitride materials and devices synthesized by MOCVD

Disclosed is a semiconductor micro-emitter array for use in a full-color microdisplay. Each pixel includes three vertically-stacked red, green, and blue micro-emitters which minimizes pixel size. The microdisplay may be exclusively based on Group III-nitride semiconductors, with differing indium concentrations in three respective InGaN/GaN active regions for emitting the three RGB colors. Alternatively the microdisplay may be based on hybrid integration of InGaN based III-nitride semiconductors for blue and green emissions, and AlGaInP based (e.g., Group III-V) semiconductors for red emissions.

Micro-emitter array based full-color micro-display

A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.

AC/DC light emitting diodes with integrated protection mechanism

An AC/DC indicator lamp based on an array of micro-LEDs may be powered by a standard high voltage AC or DC power source. The indicator lamp has a low power consumption. The micro-LEDs are serially connected on a substrate with the total device area and power consumption compatible with a standard DC low voltage LED. A plurality of indicator lamps may be connected together in parallel to present a string of indicator lamps.

Micro-LED based high voltage AC/DC indicator lamp

Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800&#xb0; C. Pulsed NHis used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.

Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors

A single-chip integrated LED particularly adapted for direct use with a high voltage DC or AC power sources comprises a plurality of electrically isolated LEDs on a generally transparent substrate and bonded to electrically conductive elements on a thermally conductive mount. A reflective coating may be applied to the area between LEDs.

Heterogeneous integrated high voltage DC/AC light emitter

A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities of the arrays are connected together and then connected to the AC power source. During the positive half of the AC cycle, one array of LEDs is forward biased and energized, while the other array is reverse biased. During the negative half of the AC cycle, the other array of LEDs is forward biased and thus energized, while the first array is reverse biased and thus not energized. The arrays are alternately energized and de-energized at the frequency of the AC power source, and thus the single-chip integrated LED always appears to be energized.

Growing community of inventors

Manhattan, KS, United States of America

Hongxing Jiang