Globalfoundries Singapore Pte. Ltd.

Hongxi Liu

Yi Jiang

Curtis Chun-I Hsieh

Yong Wee Francis Poh

Yew Tuck Clament Chow

Narayanapillai Kulothungasagaran

Subash Pattabiraman Lakshmipathi

Baolei Wu

Jin Ho Lee

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a lower contact in a lower interlayer dielectric layer. A base contact layer is formed overlying the lower interlayer dielectric layer and the lower contact, and a base contact is formed by removing a portion of the base contact layer. The base contact is formed in electrical communication with the lower contact. A base interlayer dielectric layer is formed overlying the lower interlayer dielectric layer after forming the base contact, where the base interlayer dielectric layer is adjacent to a base contact side surface. A memory cell is formed overlying the base contact, where the memory cell is in electrical communication with the base contact.

Integrated circuits with memory cells and methods for producing the same

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Singapore, Singapore

Hongxi Liu