Arm Limited

N K Technology Ltd

Hongwei Zhu

Mouli Rajaram Chollangi

Yew Keong Chong

Sriram Thyagarajan

Neeraj Dogra

Abdul Rahim Forouhi

Guoguang Li

Weilu Hang Xu

Dale A Harrison

Pratik Ghanshambhai Satasia

Hemant Joshi

Satinderjit Singh

Vincent Philippe Schuppe

Arjun R Prasad

Chandan Kumar Rajendran

Prashant Lokeshwar

Syam Kumar Lalitha Gopalakrishnan Nair

Umang Deepak Kumar Doshi

Betsie Jacob

Various implementations described herein are directed to a system and methods for memory compiling. For instance, a method may include selecting source corners from a memory compiler configuration and generating a standardized set of memory instances for the selected source corners. Also, the method may include deriving a reduced set of memory instances based on the standardized set of memory instances and building a memory compiler database for a compiler space based on the standardized set of memory instances and the reduced set of memory instances.

Memory compiler techniques

Various implementations described herein are directed to a method that identifies a memory instance with multiple tile-cells. The memory instance has memory instance leakage data, and each tile-cell of the multiple tile-cells has tile-cell leakage data. The method subdivides the multiple tile-cells into multiple categories based on a relationship between the memory instance leakage data and the tile-cell leakage data. The method obtains measured leakage data for each tile-cell of the multiple tile-cells by simulating the memory instance based on the memory instance leakage data and the tile-cell leakage data for each category of the multiple categories. The method determines a combined leakage of the memory instance by combining the measured leakage data for each tile-cell of the multiple tile-cells.

Tile-cell interpolation

Various implementations described herein refer to a method. The method may include selecting a target memory instance to characterize for timing file generation, determining a number of segments for the target memory instance based on user defined accuracy, and partitioning the target memory instance into the number of segments based on a physical architecture of the target memory instance. The method may also include generating test-bench data based on the number of segments and simulating the test-bench data, obtaining simulation data for the target memory instance associated with each segment in the number of segments, and generating a timing file by reporting timing data for each segment in the number of segments.

Segmented memory instances

A silicon compiler, such as a memory compiler, provides for pin-based noise characterization in a computationally efficient manner. For a given user-provided option set, a silicon compiler provides a noise database for the set of all available memory instances by performing pin-based noise characterization on only a subset of the set of available memory instances.

Pin-based noise characterization for silicon compiler

Various implementations described herein are directed to a computing device. The computing device may include a mapper module that receives a user configuration input of a destination corner for building a destination corner database. The mapper module may include a decision making engine that decides fabrication parameters for building the destination corner database based on the verified user configuration input and memory compiler metadata. The computing device may include a builder module that performs a simulation of the destination corner based on the fabrication parameters, collects simulation results data associated with the simulation, and builds the destination corner database for the destination corner based on the simulation results data and source corner data. The computing device may include a memory compiler that accesses the destination corner database and generates memory instance structures and their electronic digital automation (EDA) views for the destination corner based on the destination corner database.

Corner database generator

A method and an apparatus for optically determining a physical parameter such as thickness t, index of refraction n, extinction coefficient k or a related physical parameter such as energy bandgap E of a thin film. A test beam having a wavelength range &Dgr;&lgr; is used to illuminate the thin film after it is deposited on a complex substrate which has at least two layers and exhibits a non-monotonic and an appreciably variable substrate optical response over wavelength range &Dgr;&lgr;. Alternatively, the thin film can be deposited between the at least two layers of the complex substrate. A measurement of a total optical response, consisting of the substrate optical response and an optical response difference due to the thin film is performed over wavelength range &Dgr;&lgr;. The at least two layers making up the complex substrate are chosen such that the effect of multiple internal reflections in the complex substrate and the film is maximized. The physical parameters are determined from the total optical response which can be in the form of a reflected and/or a transmitted beam.

Method and apparatus for optically determining physical parameters of thin films deposited on a complex substrate

A method and apparatus for optically determining a physical parameter of an underlayer such as the underlayer refractive index N.sub.u, extinction coefficient k.sub.u and/or thickness t.sub.u through a top layer having a first top layer thickness t.sub.1 and an assigned refractive index index n.sub.t and coefficient of extinction k.sub.t. The values of index n.sub.t and extinction coefficient k.sub.t can be estimated, optically determined or assigned based on prior knowledge. In a subsequent step a first reflectance R.sub.1 is measured over a wavelength range .DELTA..lambda. by using a test beam spanning that wavelength range. Then, a second reflectance R.sub.2 of the top layer and underlayer is measured using the test beam spanning wavelength range .DELTA..lambda. at a second top layer thickness t.sub.2. In a calculation step the physical parameter of the underlayer is determined from the first reflectance measurement R.sub.1, the second reflectance measurement R.sub.2, and the assigned or predetermined thickness values t.sub.1, t.sub.2, and the refractive index n.sub.t. and coefficient of extinction k.sub.t of the top layer. A dispersion model can be used in this calculation step. Alternatively, with transmissive samples, a first and second transmittance T.sub.1, T.sub.2 can be used.

Method and apparatus for optically determining physical parameters of

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Hongwei Zhu