Grirem Advanced Materials Co., Ltd.

Lenovo (beijing) Limited

Semiconductor Manufacturing International (shanghai) Corporation

Boe Technology Group Co., Ltd.

Chengdu Boe Optoelectronics Technology Co., Ltd.

Shandong Danhong Pharmaceutical Co., Ltd.

Chia Tai Tianqing Pharmaceutical Group Co., Ltd.

General Research Institute for Nonferrous Metals

Semiconductor Manufacturing International (beijing) Corporation

China Petroleum Chemical Corporation

Beijing Lenovo Software Ltd.

Research Institute of Petroleum Processing, Sinopec

Central Iron and Steel Research Institute

Legend Holdings Ltd.

Grirem Hi-tech Co., Ltd.

Hongwei Li

Huijuan Cheng

Xiaowei Huang

Yang Luo

Dunbo Yu

Haiying He

Zheng Wang

Feng Xu

Zhigan Jiang

Weidong Li

Weihua Shi

Yiqiang Yan

Lei Zhong

Wenlong Yan

Linghui Wu

Wei Lei

Chengkun Sun

Minggao Zeng

Kunmin Lai

Kuoshe Li

Shipeng Li

Jian Li

Shuhui Chen

Fan Li

Yuan Chen

Yan Chen

Bin Chen

Tianma Li

Paul Ouyang

Ao Qiong Li

Yuanshan Yao

Weidong Zhuang

Yunsheng Hu

Zhen Long

Guang Chen

Chengshuai Yang

Shaoping Peng

Dali Cui

Zhiqi Long

Yongke Hou

Shusheng Zhang

Wenjun Weng

Xinlin Peng

Ran Xu

Yongqiang Yuan

Guilin Yang

Chunmei Wang

Zhensheng Huang

Dongdong Tian

Jing Wang

Jing Han

Hao Wang

Bo Liu

Jie Chen

Peng Wang

Yun Qiu

Min Wang

Qi Guo

Zhiqiang Wang

Zihua Guo

He Fang Zhang

Kai Zhu

Na Zhao

Haizhou Wang

Mingfeng Li

Youqiang Lu

Pengfei Wang

Liangshi Wang

Jiajun Xie

Yuanfei Yang

Shuai Lu

Xiaomei Huang

Yuanyi Zhang

Zhiguang Guo

Xuejing Yang

Xiaoli Wei

Guofu Xia

Ying Yu

Fei Zhou

Ningtao Quan

Weixian Guo

Dekui Zhang

Jianwei Lu

Chao Yuan

Meisheng Cui

Haijun Peng

Hongjiang Bi

Xiaohua Jiang

Zongyu Feng

Qiang Zhong

Guiyong Wu

Lijun Ma

Liang Zou

Yongqi Zhang

Zhigang Yang

Shuyong Liu

Dakai Zhou

Shunli Zhang

Huagiang He

A method and system for pretreating waste plastics and a method and system for producing an automotive fuel from waste plastics are provided. The method for pretreating waste plastics includes the steps of: 1) contacting a waste plastic with a pretreating agent and a solvent oil for impurity removal; and 2) subjecting the effluent from step 1) to solid-liquid separation to obtain an insoluble material and an impurity-removed plastic-containing solution. The impurity-removed plastic-containing solution obtained by the method and system for pretreating waste plastics has very low metal content, chlorine content and silicon content.

Method and system for treating waste plastic material

The present invention discloses a rare-earth-manganese/cerium-zirconium-based composite compound, a method for preparing the same, and a use thereof. The composite compound is of a core-shell structure with a general formula expressed as: A REBO-(1-A)CeZrMO, wherein 0.1≤A≤0.3, preferably 0.1≤A≤0.2; a shell layer has a main component of rare-earth manganese oxide with a general formula of REMnO, wherein RE is a rare-earth element or a combination of more than one rare-earth elements, and B is Mn or a combination of Mn and a transition metal element, 1≤a≤8, 2≤b≤18, and 0.25≤c≤4; and a core has a main component of cerium-zirconium composite oxide with a general formula of CeZrMO, wherein M is one or more non-cerium rare-earth elements, 0.1≤x≤0.9, 0≤y≤0.3, and 0.01≤z≤0.3. The composite compound enhances an oxygen storage capacity of a cerium-zirconium material through an interface effect, thereby increasing a conversion rate of a nitrogen oxide.

Rare-earth-manganese/cerium-zirconium-based composite compound, method for preparing same and use thereof

Provided are a tricyclic compound as shown in formula (I) as a CRTH2 inhibitor, or a pharmaceutically acceptable salt, a tautomer, a stereoisomer or a solvate thereof, and the use thereof in treating diseases related to CRTH2 receptors. 

Tricyclic compound as CRTH2 inhibitor

Provided are a highly thermostable rare-earth permanent magnetic material, a preparation method thereof and a magnet containing the same. A composition of the rare-earth permanent magnetic material by an atomic percentage is as follows: SmRFeMN, wherein R is at least one of Zr and Hf, M is at least one of Co, Ti, Nb, Cr, V, Mo, Si, Ga, Ni, Mn and Al, x+a is 7-10%, a is 0-1.5%, y is 0-5% and z is 10-14%.

Highly thermostable rare-earth permanent magnetic material, preparation method thereof and magnet containing the same

Disclosed are a method for preparing an imidazole derivative and crystal form A and crystal form B thereof, and also disclosed is a method for preparing a compound of formula (I) and an intermediate thereof. 

Process for preparing 1-isobutyryl-1'-((1-(4,4,4-trifluorobutyl)-4,5,6,7-tetrahydro-1H-benzo[D]imidazol-2-yl)methyl)spiro[azetidine-3,3&#x2032;-indolin]-2&#x2032;-one

The present application discloses an indole as represented by formula (I) used as a CRTH2 inhibitor, and a pharmaceutically acceptable salt or tautomer of the indole, and an application of same in treating a disease related to a CRTH2 receptor. 

Indole derivative used as CRTH2 inhibitor

A data processing method includes acquiring voice data collected by at least two collecting devices from a voice source, acquiring a recognition result of the voice data that corresponds to a voice generated by the voice source, and executing a corresponding command in response to the recognition result.

Method and electronic device for processing voice data

Crystal form B of 1-isobutyryl-1'-((1-(4,4,4-trifluorobutyl)-4,5,6,7-tetrahydro-1H-benzo[d]imidazol-2-yl)methyl)spiro[azetidine-3,3&#x2032;-indolin]-2&#x2032;-one

A method for voice recognition includes acquiring a sound input, obtaining a plurality of feedback results from a plurality of recognition engines different from each other, and determining a recognition result of the sound input based on the plurality of feedback results.

Voice recognition

Crystal form A of 1-isobutyryl-1'-((1-(4,4,4-trifluorobutyl)-4,5,6,7-tetrahydro-1H-benzo [d]imidazol-2-yl)methyl)spiro[azetidine-3,3&#x2032;-indolin]-2&#x2032;-one

A rare-earth permanent magnetic powder, a bonded magnet containing thereof and a device using the bonded magnet are provided of the present disclosure. The rare-earth permanent magnetic powder comprises: 70 vol % to 99 vol % of a hard magnetic phase and 1 vol % to 30 vol % of a soft magnetic phase, the hard magnetic phase has a TbCustructure, and the grain size of the hard magnetic phase is 5 nm to 100 nm; the soft magnetic phase is a Fe phase having a bcc structure, the average grain size of the soft magnetic phase is 1 nm to 30 nm, and the standard deviation of the grain size is below 0.5&#x3c3;.

Rare-earth permanent magnetic powder, bonded magnet containing thereof and device using the bonded magnet

The application discloses a rare-earth permanent magnetic powder, a bonded magnet, and a device using the bonded magnet. The rare-earth permanent magnetic powder comprises 4 to 12 at. % of Nd, 0.1 to 2 at. % of C, 10 to 25 at. % of N and 62.2 to 85.9 at. % of T, wherein T is Fe or FeCo and the main phase of the rare-earth permanent magnetic powder is a hard magnetic phase with a TbCustructure. Material volatilization can be avoided effectively during a preparation process of the rare earth permanent magnetic powder, thus improving the wettability with a water-cooling roller during the preparation process and final prepared materials are provided with good magnetic properties.

Rare earth permanent magnetic powder, bonded magnet and device using the bonded magnet

An ESD clamp circuit includes a power supply, a ground supply, an ESD detection transistor, a capacitor having a first terminal connected to the power supply and a second terminal connected to a gate of the ESD detection transistor, and a first resistor connected in series with the capacitor between the power and ground supplies. The ESD clamp circuit also includes a clamp transistor having a first terminal connected to the power supply and a second terminal connected to the ground terminal, an inverter having an input connected to a first terminal of the ESD detection transistor and an output connected to the gate of the clamp transistor, a feedback transistor connected across the inverter, and a second resistor having a first terminal connected to the gate of the clamp transistor and to a second terminal to the ground supply.

ESD clamp circuit

A semiconductor device includes a P-type semiconductor substrate, an N-well and a P-well disposed adjacent to each other and extending along a first direction within the P-type semiconductor substrate, a first N+ doped region and a first P+ doped region extending along the first direction within the N-well and spaced away from each other along a second direction perpendicular to the first direction, a second N+ doped region and a second P+ doped region extending along the first direction within the P-well and spaced away from each other along the second direction, and a plurality of third N+ doped regions and a plurality of P+ doped regions alternatively disposed in a junction region formed between the N-well and P-well the third N+ doped regions. The third N+ doped regions and the third P+ doped regions form a Zener diode.

Zener triggered silicon controlled rectifier with small silicon area

A semiconductor device may include the following elements: a first n-type region; a second n-type region; a p-type region, which directly contacts each of the first n-type region and the second n-type region; a first p-type portion, which directly contacts the first n-type region; a first n-type portion, which directly contacts each of the first n-type region and the p-type region; a first electrode, which is electrically connected to each of the first p-type portion and the first n-type portion; a second p-type portion, which directly contacts the second n-type region; a second n-type portion, which directly contacts each of the second n-type region and the p-type region; and a second electrode, which is electrically connected to each of the second p-type portion and the second n-type portion.

Semiconductor device and related electronic device

Growing community of inventors

Beijing, China

Hongwei Li