Tsinghua University

Hongtao Zhong

Huazhong Yang

Xueqing Li

The present disclosure discloses an SRAM cell circuit and an SRAM array circuit. The cell circuit includes a data storage module, a write operation module, and a read operation module. The data storage module consists of the component with the current-voltage hysteresis characteristic and is configured to store data with the current-voltage hysteresis characteristic. The data storage module includes a write operation port and a read operation port, and the data information stored in the data storage module may change without external energy input. The write operation module is coupled to the write operation port and is configured to perform write operation on the stored information. The write operation module ensures the stored information unchanged by continuously controlling the write operation port while not changing the stored information. The read operation module is coupled to the read operation port and configured to perform read operation on the stored information.

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Beijing, China

Hongtao Zhong