Samsung Electronics Co., Ltd.

Hongtaek Lim

Donghoon Han

Kyuho Lee

Junghyeon Kim

Sejun Park

Oleg Feygenson

Jongyong Bae

Seoyoung Maeng

Hojun Kim

Sanggon Shin

Jiho Uh

Minjoon Kim

Byounghoon Ji

Hanhim Kang

Kyoungwoo Hong

Yeongyeop Song

Kangsoo Kim

Kwangpyo Hong

Jeonghoon Nam

Hyunjun Ahn

An edge ring includes an annular body portion having a bottom surface and a top surface, a first step portion extending along an inner periphery of the body portion and having an annular first bottom surface positioned higher than the bottom surface of the body portion by a first height, an inclined portion extending along an inner periphery of the first step portion and having an inclined bottom surface extending at a first angle with respect to a first plane in which the first bottom surface is placed, a second step portion extending along an inner periphery of the inclined portion and having a second bottom surface positioned higher than the bottom surface of the body portion by a second height greater than the first height, and a plurality of passages extending outwardly from the first bottom surface of the first step portion at a second angle with respect to the first bottom surface.

Edge ring, substrate processing apparatus having the same and method of manufacturing semiconductor device using the apparatus

A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.

Method of depositing atomic layer and method of manufacturing semiconductor device

A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Vacuum chuck, substrate processing apparatus including the same and related method of manufacture

A semiconductor device fabricating apparatus includes a gas mixer having an upper surface and a lower surface, each of the upper and lower surfaces has an elliptical plane, and a side surface connecting the upper and lower surfaces, a gas inlet pipe on an upper portion of the gas mixer, and a gas outlet pipe on a lower portion of the gas mixer.

Gas mixer and semiconductor device fabricating apparatuses including the same

Growing community of inventors

Seoul, South Korea

Hongtaek Lim