Samsung Electronics Co., Ltd.

Solus Advanced Materials Co., Ltd.

HongSuk Kim

Sunggil Kim

Ji-Hoon Choi

Seulye Kim

Jaeyoung Ahn

Phil Ouk Nam

Junkyu Yang

Tae-Jong Han

Daewoong Kim

Hunhyeong Lim

Sanghoon Lee

Jung-Hwan Kim

Sangsoo Lee

SeungHyun Lim

Young Bae Kim

Jintae Noh

Guk-Hyon Yon

Hoe Moon Kim

Hyunjun Sim

Ho Jun Son

Hyungchan Bae

The present invention relates to a novel compound having excellent functions, such as electron injection and transport and light emission functions, and an organic electroluminescence device. By using the novel compound in an organic material layer of the organic electroluminescence device, properties of the device such a light emitting efficiency, driving voltage, and life can be improved.

Organic light emitting compound and organic electroluminescence device using same

A semiconductor device may include a substrate, an electrode structure including electrodes stacked on the substrate, an upper semiconductor pattern penetrating at least a portion of the electrode structure, and a lower semiconductor pattern between the substrate and the upper semiconductor pattern. The upper semiconductor pattern includes a gap-filling portion and a sidewall portion extending from the gap-filling portion in a direction away from the substrate, the lower semiconductor pattern includes a concave top surface, the gap-filling portion fills a region enclosed by the concave top surface, a top surface of the gap-filling portion has a rounded shape that is deformed toward the substrate, and a thickness of the sidewall portion is less than a thickness of the gap-filling portion.

Semiconductor device and method of fabricating the same

A semiconductor memory device has a plurality of gates vertically stacked on a top surface of a substrate, a vertical channel filling a vertical hole that extends vertically through the plurality of gates, and a memory layer in the vertical hole and surrounding the vertical channel. The vertical channel includes a bracket-shaped lower portion filling part of a recess in the top of the substrate and an upper portion extending vertically along the vertical hole and connected to the lower channel. At least one end of an interface between the lower and upper portions of the vertical channel is disposed at a level not than that of the top surface of the substrate.

Three dimensional semiconductor memory with residual memory layer

A three-dimensional semiconductor device includes gate electrodes sequentially stacked on a substrate, a channel structure penetrating the gate electrodes and being connected to the substrate, an insulating gap-fill pattern provided within the channel structure and surrounded by the channel structure as viewed in a plan view, and a conductive pattern on the insulating gap-fill pattern. At least a portion of the insulating gap-fill pattern is received in the conductive pattern, and at least a portion of the conductive pattern is interposed between at least that portion of the insulating gap-fill pattern and the channel structure.

Three-dimensional semiconductor devices

A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

Three-dimensional semiconductor memory device and method of fabricating the same

Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.

Semiconductor devices including device isolation structures and method of forming the same

Methods of manufacturing a semiconductor device are provided. The method includes forming a poly-silicon layer doped with first p-type dopants on a substrate, etching the poly-silicon layer and the substrate to form a poly-silicon pattern and a trench, forming device isolation pattern covering a lower sidewall of the poly-silicon pattern in the trench, thermally treating the poly-silicon pattern in a gas including second p-type dopants, forming a dielectric layer and a conductive layer on the thermally treated poly-silicon pattern and the device isolation pattern, etching the conductive layer, the dielectric layer, and the thermally treated poly-silicon pattern to form a control gate, a dielectric pattern, and a floating gate respectively.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

HongSuk Kim