Samsung Electronics Co., Ltd.

Hongsik Yoon

Jungmin Park

Junho Lee

Minyoung Park

Dongsuk Shin

Bonyoung Koo

Ingyu Baek

Byeongchan Lee

Keum Seok Park

Jinyeong Joe

Hyunjun Sim

Jinshi Zhao

Jungho Yoo

Jinho Kim

Youngseok Jung

Jinwoo Oh

A operating method of a wireless communication device includes transmitting a sounding reference signal (SRS) to a base station; receiving, from the base station, a first reference signal to which a second precoder is applied; generating feedback information including at least one of a rank indicator (RI) and a channel quality indicator (CQI), based on at least one of: (i) a relationship between the second precoder and a first precoder applied to a first physical downlink shared channel (PDSCH) by the base station based on the SRS; and (ii) a channel estimated by using the first reference signal; transmitting the generated feedback information to the base station; and receiving a second PDSCH to which at least one of the first precoder, the RI, and the CQI is applied.

Wireless communication device transmitting and receiving data using channel state information feedback and operating method thereof

An operating method of a user equipment (UE) includes receiving channel state information-reference signal (CSI-RS) configuration information from a base station including time and frequency location information of a first CSI-RS, the first CSI-RS corresponding to a first density value of 0.5, 1 or 3, determining whether to request a second CSI-RS having a second density value based on a channel characteristic, the second density value being different from the first density value, and the channel characteristic corresponding to a channel between the UE and the base station, transmitting a request message to the base station in response to determining to request the second CSI-RS, receiving the second CSI-RS from the base station based on the CSI-RS configuration information, the second CSI-RS being based on the request message, estimating the channel based on the second CSI-RS, and transmitting a CSI-RS report to the base station based on the channel estimate.

Wireless communication device for transmitting and receiving reference signals and operating method thereof

A wireless communication apparatus for supporting communication with multiple transmission and reception points (TRPs) includes a radio frequency integrated circuit (RFIC) configured to receive a first reference signal from a first TRP and a second reference signal from a second TRP, and processing circuitry configured to estimate channels of a plurality of subcarriers based on at least one of the first reference signal or the second reference signal, determine a beamforming parameter based on the estimated channels, the beamforming parameter being determined based on a capacity of an effective channel between the wireless communication apparatus and both the first TRP and the second TRP, and adjust a reception beam based on the beamforming parameter, and the RFIC being configured to receive a first physical downlink shared channel (PDSCH) from the first TRP through the adjusted reception beam, and receive a second PDSCH from the second TRP.

Wireless communication apparatus for receiving data from multiple transmission and reception points and operating method of the same

The present disclosure relates to a channel estimation method of a wireless communication device. The channel estimation method includes descrambling a pilot signal having a unit symbol, dividing the descrambled pilot signal, and estimating a channel value of the wireless communication device. The descrambled pilot signal may be divided into a plurality of frequency resources with a first frequency resource and a second frequency resource and generating a first signal chunk with the first frequency resource and a second signal chunk with the second frequency resource. The channel value of the wireless communication device may be estimated based on the first signal chunk and the second signal chunk.

Wireless communication device and channel estimation method thereof

A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.

Semiconductor devices including source/drain regions having multiple epitaxial patterns

A semiconductor memory device includes a first conductive line, a second conductive line crossing over the first conductive line, a resistance variation part disposed at a position in which the second conductive line intersects with the first conductive line and electrically connected to the first conductive line and the second conductive line and a mechanical switch disposed between the resistance variation part and the second conductive line. The mechanical switch includes a nanotube.

Semiconductor memory device

A nonvolatile memory device includes resistive memory devices in a three-dimensional structure. A block select circuit generates a block select signal for selecting a memory block. In response to the block select signal, local word line selection units connected to each memory block connect global word lines connected to a word line decoder and local word lines, and local bit line selection units connected to each memory block connect global bit lines connected to a sense amplifier and local bit lines. Each memory block includes local word lines which extend in a first direction and are stacked in a second direction perpendicular to the first direction on a second plane perpendicular to a first plane. Local bit lines extend in the second direction to cross local word lines. Memory cells are formed at cross-points where local word lines and local bit lines cross one another.

Growing community of inventors

Seongnam-si, South Korea

Hongsik Yoon