Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Hongsick Park

Hyuneok Shin

Sangwon Shin

Juhyun Lee

Gyungmin Baek

Sanggab Kim

Sangwoo Sohn

Youngjun Kim

Dongmin Lee

Dokeun Song

Sukyoung Yang

Hyang-Shik Kong

Jong-Hyun Choung

Bong-Kyun Kim

Byeong-Beom Kim

Byeong-Jin Lee

Yeun Tae Kim

Jinho Ju

Seungho Yoon

Seon-Il Kim

Changoh Jeong

In-Bae Kim

Kyeongsu Ko

Kyungtae Chae

Namseok Roh

Jiseong Yang

Youngchul Park

Inho Yu

Inseol Kuk

Dae-Young Lee

Hyunmin Cho

Shin Il Choi

Youngmin Moon

Byung Han Yoo

Ki-beom Lee

Shinil Choi

Joongeol Lee

Kijune Lee

Sam-Young Cho

Gyu-po Kim

Seokhyun Lim

Won-guk Seo

Hyun-cheol Shin

Giyong Nam

Seung-yeon Han

Jaeuoon Kim

Youngjin Yoon

Daesung Lim

KyeongSu Ko

Soomin An

Seungsoo Lee

Jongmun Lee

Suckjun Lee

A display panel includes: a base layer; a signal line disposed on the base layer, the signal line including: a first layer including aluminum; and a second layer directly disposed on the first layer, the second layer including a niobium-titanium alloy; a first thin film transistor connected to the signal line; a second thin film transistor disposed on the base layer; a capacitor electrically connected to the second thin film transistor; and a light emitting element electrically connected to the second thin film transistor.

Display panel and method of fabricating the same

A method of manufacturing a display panel includes forming a circuit layer including a gate, a source, and a drain on a base substrate and forming a light emitting element layer on the circuit layer. The forming of the circuit layer includes sequentially forming a preliminary metal layer, a preliminary oxide layer comprising molybdenum and tantalum, and a preliminary capping layer which comprise a preliminary electrode layer, cleaning the preliminary electrode layer, forming a photoresist layer pattern on the preliminary electrode layer, etching the preliminary electrode layer, and removing the photoresist layer pattern. During the etching of the preliminary electrode layer, a ratio between a removal speed ERof the preliminary oxide layer and a removal speed ERof the preliminary metal layer satisfies Equation 1 to maintain a low reflection property1≤≤3.  [Equation 1]

Method of manufacturing display panel with circuit-layer stack including metal, oxide, and capping layers, and display panel manufactured by the same

Provided is a display device including a display layer which includes an active area and a peripheral area adjacent to the active area, a biometric information sensing layer disposed below the display layer and including a sensor, and an optical pattern layer disposed on an optical pattern plane between the biometric information sensing layer and the display layer and including a light blocking part and a transmission part having higher light transmittance than the light blocking part, wherein an upper surface of the light blocking part is concave, and recessed away from the optical pattern plane.

Display device and method for manufacturing the same

A method of manufacturing a display panel includes forming a circuit layer including a gate, a source, and a drain on a base substrate and forming a light emitting element layer on the circuit layer. The forming of the circuit layer includes sequentially forming a preliminary metal layer, a preliminary oxide layer comprising molybdenum and tantalum, and a preliminary capping layer which comprise a preliminary electrode layer, cleaning the preliminary electrode layer, forming a photoresist layer pattern on the preliminary electrode layer, etching the preliminary electrode layer, and removing the photoresist layer pattern. During the etching of the preliminary electrode layer, a ratio between a removal speed ERof the preliminary oxide layer and a removal speed ERof the preliminary metal layer satisfies Equation 1 to maintain a low reflection property1&#x2264;&#x2264;3.&#x2003;&#x2003;[Equation 1]

Method of manufacturing display panel utilizing ratio of etching removal speeds and display panel manufactured by the same

A display panel includes a base layer, a signal line which is disposed on the base layer and includes a first layer including aluminum and a second layer disposed directly on the first layer and consisting of niobium, a first thin film transistor connected to the signal line, a second thin film transistor disposed on the base layer, a capacitor electrically connected to the second thin film transistor, and a light emitting element electrically connected to the second thin film transistor.

Display panel including a signal line having a two-layer structure, and method for manufacturing the same

A display panel includes a base substrate, a pixel including a thin film transistor and a display element, a first signal line connected to the pixel, and a second signal line disposed on a layer different from the first signal line. At least one of the first signal line and the second signal line includes a lower layer including a conductive material and an upper layer disposed on the lower layer and including a conductive material. The upper layer has an etch selectivity in a range equal to or greater than about 0.5 and equal to or smaller than about 3 with respect to the lower layer.

Display panel

A display device includes a base layer, a display element disposed on the base layer, and a signal line disposed on the base layer and electrically connected to the display element. The signal line includes a conductive layer and a capping layer. The capping layer is disposed on the conductive layer and includes vanadium nitride (VN) and zinc oxide (ZnO). The display device may reduce the reflection of an external light source, thereby having improved visibility.

Display device

A display device includes: a substrate including a display area and a peripheral area outside the display area; a plurality of display elements arranged in the display area; and a pad disposed in the peripheral area and having a multi-layered structure, where the multi-layered structure of the pad includes: a metal layer; a conductive protective layer on a top surface of the metal layer; and a metal thin film on a top surface of the conductive protective layer.

A mask for thin film deposition includes a first mask which defines an opening, and a second mask on a surface of the first mask, and which defines a plurality of deposition holes and has a multilayer structure, in which the opening and the plurality of deposition holes communicate with each other and provide a passage for a deposition material, a size of each of the plurality of deposition holes is smaller than a size of the opening, and each of the plurality of deposition holes has a shape corresponding to a deposition pattern to be patterned on a substrate.

Mask for thin film deposition, and fabrication method thereof

An organic light-emitting diode includes a first electrode and a second electrode that face each other, an organic emission layer between the first electrode and the second electrode, and an inorganic hole injection layer between the first electrode and the organic emission layer. The inorganic hole injection layer includes oxide of a form A-B-O, including an element A and an element B. The element A is one of molybdenum (Mo) and tungsten (W). The element B is one of vanadium (V), niobium (Nb), and tantalum (Ta). An atom content (x) of the element B is greater than 0 and no more than 15 at % (0&#x3c;x&#x2264;15 at %) based on a total atom content of the inorganic hole injection layer.

Organic light-emitting diode and organic light-emitting display device including the same

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

Etchant composition and method of manufacturing a thin film transistor substrate by using the same

A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode. Each of the source electrode and the drain electrode includes a wire layer and a protective layer. The protective layer includes zinc oxide in an amount greater than about 70% by weight and less than about 85% by weight and indium oxide in an amount greater than about 15% by weight and less than about 30% by weight.

Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same

A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel includes a cover layer defining a TSC (Tunnel Shaped Cavity) on the base substrate, an image display part provided in the TSC, and first and second electrodes which apply an electric field to the image display part.

Display apparatus and method of manufacturing the same

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Suwon-si, South Korea

Hongsick Park