Future Wei Technologies, Inc.

Huawei Technologies Co., Limited

Finisar Corporation

Hisilicon Optoelectronics Co., Limited

Hongmin Chen

Xiao Andy Shen

Hongbing Lei

Zongrong Liu

Qianfan Xu

Daniel Mahgerefteh

Xueyan Zheng

Rongsheng Miao

Huapu Pan

Yu Sheng Bai

Jianying Zhou

Xuejin Yan

Lin Wu

Hongzhen Wei

Jifang He

Parviz Tayebati

Kevin John McCallion

Li Ping Yang

Yasuhiro Matsui

Xi Huang

Bernd Huebner

Dawei Zheng

YuSheng Bai

Zhenwei Cui

Chunlei Liao

Kaisheng Chen

Eric Dudley

Guoxi Sun

Xiong Ye

Rongshen Miao

Li Yang

A reflector structure for a tunable laser and a tunable laser. A super structure grating is used as a reflector structure, and a suspended structure is formed around a region in which the super structure grating is located, to implement, using the suspended structure, thermal isolation around the region in which the super structure grating is located, and increase thermal resistance, such that less heat is lost, and heat is concentrated in the region in which the super structure grating is located, thereby improving thermal tuning efficiency of the reflector structure. Moreover, lateral support structures are disposed on two sides of the suspended structure, to provide a mechanical support for the suspended structure. In addition, regions in the super structure grating that correspond to any two lateral support structures on a same side of the suspended structure fall at different locations in a spatial period of the super structure grating.

Reflector structure for tunable laser and tunable laser

A super structure grating spatially performs amplitude and phase modulation on a uniform grating using a modulation function to generate a comb reflection spectrum. (N+1) modulation function discrete values are obtained after discretization processing is performed on the modulation function using N thresholds. Each of the (N+1) modulation function discrete values corresponds to one section of optical waveguide whose refractive index is uniform or corresponds to one section of the uniform grating. A reflectivity and a full width half maximum (FWHM) of a reflection peak of the super structure grating is adjusted based on a relationship of a ratio of a length of an optical waveguide corresponding to at least one of the (N+1) modulation function discrete values to a total grating length of the super structure grating, and based on the total grating length of the super structure grating.

Super structure grating and tunable laser

Embodiments of the present disclosure relate to a surface-mount laser apparatus. One example apparatus includes an on-chip laser, a passive waveguide, and a waveguide detector. The waveguide detector includes a first ridge waveguide. The on-chip laser includes a second ridge waveguide. The on-chip laser is coupled with the passive waveguide by the second ridge waveguide, and the waveguide detector is coupled with the passive waveguide by the first ridge waveguide.

Surface-mount laser apparatus and output optical power monitoring method

A wavelength tunable laser includes: a heating layer, a dielectric layer, reflectors, a transport layer, a support layer, and a substrate layer. The heating layer is located above the transport layer; the transport layer is located above the support layer, and the transport layer includes an upper cladding layer, a waveguide layer, and a lower cladding layer from top to bottom; the reflector is located in the transport layer; the support layer has a protection structure, where the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure has a support structure; and the substrate layer is located below the support layer. The heating layer, the reflector, and a part of the transport layer form a suspended structure to prevent heat dissipation. Thus thermal tuning efficiency can be improved, and power consumption can be lowered.

Tunable laser and manufacturing method for tunable laser

A tunable laser is provided, including a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller. The phase adjustment area is located between the first reflector and the gain area, the gain area is located between the phase adjustment area and the second reflector, a reflectivity of the first reflector is adjustable, and a reflectivity of the second reflector is adjustable. The first detector is configured to convert an optical signal of the first reflector into a first electrical signal. The second detector is configured to convert an optical signal of the second reflector into a second electrical signal. The controller is configured to adjust at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on the first electrical signal and the second electrical signal.

Tunable laser and control method for same

An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.

Edge coupling device fabrication

A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

MOS capacitor optical modulator with transparent conductive and low-refractive-index gate

A PAM4 signal generation apparatus is provided. The PAM4 signal generation apparatus includes a DFB, two EA modulators, an SOA, a PSR, a direct-current power source, two electrical-signal generators, and two amplitude-limiting amplifiers. The two electrical-signal generators and the two amplitude-limiting amplifiers are used to generate two NRZ electrical signals respectively, the DFB outputs two optical signals, the SOA amplifies an optical power of one of the optical signals, the two EA modulators use the NRZ electrical signals and the optical signals including 'a large signal and a small signal' respectively to generate two NRZ optical signals respectively, and the two NRZ optical signals are multiplexed by the PSR to generate a PAM4 electrical signal. According to this apparatus, a linearity requirement is greatly lowered. PAM4 modulation is performed in an optical domain, and this prevents a PAM4 signal from being generated on an electrical signal.

PAM4 signal generation apparatus

An apparatus comprises: a first input tap; a first optical modulator coupled to the first input tap; a first output tap coupled to the first optical modulator so that the first optical modulator is positioned between the first input tap and the first output tap; and a controller indirectly coupled to the first input tap and the first output tap.

Optical modulator bias locking

A method for fabricating a photonic integrated circuit (PIC) comprises providing a wafer comprising an insulator layer positioned between a top semiconductor layer and a base semiconductor layer, patterning the top semiconductor layer to simultaneously define a waveguide and a first etch mask window for forming a fiber-guiding v-groove that substantially aligns to an axis of optical signal propagation of the waveguide, removing a first portion of the top semiconductor layer to form the waveguide according to the patterning, removing a second portion of the top semiconductor layer to form the first etch mask window according to the patterning, and forming the fiber-guiding v-groove according to the first etch mask window.

Integration of V-grooves on silicon-on-insulator (SOI) platform for direct fiber coupling

A metal-oxide-semiconductor (MOS) type semiconductor device, comprising a silicon substrate, a first cathode electrode and a second cathode electrode coupled to the silicon substrate and located on distal ends of the silicon substrate, a poly-silicon (Poly-Si) gate proximally located above the silicon substrate and between the first cathode electrode and the second cathode electrode, wherein the Poly-Si gate comprises a first post extending orthogonally relative to the silicon substrate comprising a first doped silicon slab, a second post extending orthogonally relative to the silicon substrate comprising a second doped silicon slab, wherein the second post is positioned so as to create a width between the first post and the second post, an anode electrode coupled to the first post and the second post and extending laterally from the first post to the second post, and a dielectric layer disposed between the first silicon substrate and the second silicon substrate.

Patterned poly silicon structure as top electric contact to MOS-type optical modulators

A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.

A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.

Tunable laser with high thermal wavelength tuning efficiency

An apparatus comprising a thick waveguide comprising a first adiabatic tapering from a first location to a second location, wherein the first adiabatic tapering is wider at the first location than at the second location, and a thin slab waveguide comprising a second adiabatic tapering from the first location to the second location, wherein the second adiabatic tapering is wider at the second location than at the first location, and a third adiabatic tapering from the second location to a third location, wherein the third adiabatic tapering is wider at the second location than at the third location, wherein at least a portion of the first adiabatic tapering is adjacent to the second adiabatic tapering, and wherein the first adiabatic tapering and the second adiabatic tapering are separated from each other by a constant gap.

Growing community of inventors

Davis, CA, United States of America

Hongmin Chen