Springworks, LLC

Symmorphix, Inc.

Other

Infinite Power Solutions, Inc.

Demaray, LLC

Hongmei Zhang

Richard Ernest Demaray

Ravi Mullapudi

Mukundan Narasimhan

Kai-An Wang

Rajiv Pethe

Douglas P Stadtler

Bernd J Neudecker

Qing Zhu

R Ernest Demaray

Harold D Ackler

John C Egermeier

Vassiliki Milonopoulou

In accordance with the present invention, deposition of LiCoOlayers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoOwith a desired &#x3c;101&#x3e; or &#x3c;003&#x3e; orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoOfilms, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (&#x3e;700&#xb0; C.) anneal step that is conventionally needed to crystallize the LiCoOlayer.

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A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.

Biased pulse DC reactive sputtering of oxide films

In accordance with the present invention, deposition of LiCoOlayers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoOwith a desired () or () orientation. Some embodiments of the deposition addresses the need for high rate deposition of LiCoOfilms, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (&#x3e;700&#xb0; C.) anneal step that is conventionally needed to crystallize the LiCoOlayer. Some embodiments of the process can improve a battery utilizing the LiCoOlayer by utilizing a rapid thermal anneal process with short ramp rates.

In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (&#x3e;700&#xb0; C.) anneal step that is conventionally needed to crystallize the BST layer.

Deposition of perovskite and other compound ceramic films for dielectric applications

An as-deposited waveguide structure is formed by a vapor deposition process without etching of core material. A planar optical device of a lighthouse design includes a ridge-structured lower cladding layer of a low refractive index material. The lower cladding layer has a planar portion and a ridge portion extending above the planar portion. A core layer of a core material having a higher refractive index than the low refractive index material of the lower cladding layer overlies the top of the ridge portion of the lower cladding. A slab layer of the core material overlies the planar portion of the lower cladding layer. The lighthouse waveguide also includes a top cladding layer of a material having a lower refractive index than the core material, overlying the core layer and the slab layer. A method of forming an as-deposited waveguide structure includes first forming a ridge structure in a layer of low refractive index material to provide a lower cladding layer. Next a layer of core material is deposited over the ridge structure by a vapor deposition process. Finally, a top cladding layer of a material having a lower refractive index than the core material is deposited over the core layer.

As-deposited planar optical waveguides with low scattering loss and methods for their manufacture

A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.

A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated processes performed on a reactor according to the present inention.

Physical vapor deposition processes provide optical materials with controlled and uniform refractive index that meet the requirements for active and passive planar optical devices. All processes use radio frequency (RF) sputtering with a wide area target, larger in area than the substrate on which material is deposited, and uniform plasma conditions which provide uniform target erosion. In addition, a second RF frequency can be applied to the sputtering target and RF power can be applied to the substrate producing substrate bias. Multiple approaches for controlling refractive index are provided. The present RF sputtering methods for material deposition and refractive index control are combined with processes commonly used in semiconductor fabrication to produce planar optical devices such surface ridge devices, buried ridge devices and buried trench devices. A method for forming composite wide area targets from multiple tiles is also provided.

Growing community of inventors

San Jose, CA, United States of America

Hongmei Zhang