Toyoda Gosei Co., Ltd.

Honglin Wang

Eisuke Yokoyama

Hironao Shinohara

Koji Kamei

A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion () that includes an n-side power supply electrode (), an n-side auxiliary electrode () and n-side connective electrodes (). The n-side power supply electrode () and auxiliary electrode () are provided in the inner side beyond the p-type semiconductor layer () viewed from the light emitting layer (). On the p-type semiconductor layer (), a power supply insulating layer () transparent to light from the light emitting layer () is provided, and portions at lower side of the n-side power supply electrode () and auxiliary electrode () are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Semiconductor light emitting element and light emitting device

A semiconductor light emitting element () provided with an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a transparent electrode (), a p-side electrode () formed on the transparent electrode, and an n-side electrode () formed on the n-type semiconductor layer. The p-side electrode has a p-side joining layer () and a p-side bonding pad electrode (), which are laminated on the transparent electrode, and the n-side electrode has an n-side joining layer () and an n-side bonding pad electrode (), which are laminated on the n-type semiconductor layer. The p-side joining layer and the n-side joining layer are configured of a mixed layer composed of TaN and Pt, and the p-side bonding pad electrode and the n-side bonding pad electrode are configured of a laminated structure composed of Pt and Au.

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Ichihara, Japan

Honglin Wang