Xiamen Sanan Optoelectronics Technology Co., Ltd.

Hongliang Lin

Duxiang Wang

Chaoyu Wu

Ching-Shan Tao

Yi-Jui Huang

Chun-I Wu

Junkai Huang

A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaInAsP, 0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x2264;0.05, and the barrier layer has a component formula of (AlGa)InP, 0.3&#x2264;a&#x2264;1 and 0&#x3c;b&#x3c;1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

LED for plant illumination

An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaInAsP(0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x3c;1), and a barrier layer, forming a 2&#x2dc;40-pair alternating-layer structure with the strained light-emitting layer.

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Xiamen, China

Hongliang Lin