Changxin Memory Technologies, Inc.

Hongkun Shen

Yong Lu

Gongyi Wu

Qiuhu Pang

A capacitor structure and a method of manufacturing the same, and a memory are provided. The method includes the following operations. A substrate is provided. A first conductive structure with a shape of column is formed on the substrate. A second conductive structure is formed on the substrate. The second conductive structure surrounds the first conductive structure and is spaced with the first conductive structure. The first conductive structure and the second conductive structure together form a bottom electrode. A capacitor dielectric layer is formed. The capacitor dielectric layer covers the surface of the substrate and the surface of the bottom electrode. A top electrode covering the surface of the capacitor dielectric layer is formed.

Capacitor structure and method of manufacturing same, and memory

A buried wordline structure fabrication method includes: providing a first trench in a semiconductor substrate, wherein the first trench has a tip on its bottom; performing epitaxial growth within the first trench to reduce the depth of the tip on the bottom of the first trench; and forming a gate dielectric layer on an inner wall of the first trench and filling a gate conductive layer within the first trench to form the buried wordline structure.

Fabrication method of buried wordline structure

The present disclosure discloses a semiconductor device and a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device includes following steps: providing a semiconductor substrate, and forming active regions and trench isolation structures in the semiconductor substrate, wherein the trench isolation structures are located between the active regions; forming first grooves in the active regions; filling the first grooves to form inversion polysilicon layers, the inversion polysilicon layers being inversely doped with the active regions; forming second grooves, the second grooves running through the polysilicon layers and a part of the semiconductor substrate, and reserving parts of the inversion polysilicon layers located on side faces of the second grooves; and, forming buried word line structures in the second grooves.

Semiconductor device and method for manufacturing semiconductor device

A lead-free glass paste, a chip resistor and a method for producing the same are provided. The lead-free glass paste includes 6-7 parts by mass of borosilicate oil, 12-21 parts by mass of aluminum oxide powder, 2-3 parts by mass of glass fiber powder, and 0.1-0.5 parts by mass of a curing agent.

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Hefei, China

Hongkun Shen