Samsung Electronics Co., Ltd.

Hongjun Lee

Sunyoung Lee

Kiseok Lee

Hui-Jung Kim

Jongmin Kim

Jihun Lee

Myeong-Dong Lee

Hyo-Sub Kim

Kanguk Kim

Yeongshin Park

Hosun Jung

Cera Hong

Sukhwa Jang

Hyunsuk Noh

Jinseo Choi

Sohyang Lee

Sangkyu Sun

Jeongmin Jin

Jeonghee Choi

A semiconductor memory device includes: a device isolation pattern provided on a substrate to provide a first active portion and a second active portion; a first storage node pad disposed on the first active portion; a second storage node pad disposed on the second active portion; a pad separation pattern disposed between the first and second storage node pads; a word line disposed in the substrate to cross the first and second active portions; a bit line disposed on the pad separation pattern and crossing the word line; a buffer layer disposed on the pad separation pattern; and a mask polysilicon pattern interposed between the buffer layer and the bit line, wherein a side surface of the mask polysilicon pattern is substantially aligned to a side surface of the bit line, and the mask polysilicon pattern is vertically overlapped with the pad separation pattern.

Semiconductor memory device

A method of manufacturing a semiconductor device includes forming a lower structure including a plurality of transistors, forming a conductive layer on the lower structure, forming first preliminary pad mask patterns and wiring mask patterns on the conductive layer, forming pad mask patterns by patterning the first preliminary pad mask patterns while protecting the wiring mask patterns, and etching the conductive layer using the pad mask patterns and the wiring mask patterns as an etching mask to form pad patterns and wiring patterns.

Methods of manufacturing semiconductor device

Growing community of inventors

Suwon-si, South Korea

Hongjun Lee