Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Wireless Ip, Pte. Ltd.

Hongjun Feng

Richard C Ruby

Paul D Bradley

Ronald Shane Fazzio

John Dwight Larson, Iii

John Choy

Kevin J Grannen

R Shane Fazzio

Donald Lee

Urupattur C Sridharan

Kun Wang

Carrie A Rogers

An acoustic resonator comprises: a substrate; a first electrode adjacent the substrate; a layer of piezoelectric material adjacent the first electrode; a second electrode adjacent the layer of piezoelectric material; and a passivation layer adjacent the layer of piezoelectric material. The passivation layer includes a recessed feature. Fill material is provided in the recessed feature of the passivation layer.

Acoustic resonator performance enhancement using selective metal etch

An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.

Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric

Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Acoustic resonator performance enhancement using alternating frame structure

The temperature-compensated film bulk acoustic resonator (FBAR) device comprises an FBAR stack that comprises an FBAR characterized by a resonant frequency having a temperature coefficient and a temperature-compensating layer comprising doped silicon dioxide. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element has a temperature coefficient on which the temperature coefficient of the resonant frequency of the FBAR depends at least in part.

Film bulk acoustic resonator (FBAR) devices with temperature compensation

A resonator structure (FBAR) made of electrodes sandwich a piezoelectric material. The intersection of the two conducting electrodes defines the active area of the acoustic resonator. The active area is divided into two concentric areas; a perimeter or frame, and a central region. An annulus is added to one of the two conducting electrodes to improve the electrical performance (in terms of Q).

Thin film bulk acoustic resonator with a mass loaded perimeter

Acoustically coupled resonators include a first and a second acoustic resonator. Both the first and second acoustic resonators include a first electrode, a layer of piezoelectric material, and a second electrode. The first electrode is adjacent a first surface of the layer of piezoelectric material. The second electrode is adjacent a second surface of the layer of piezoelectric material. At least the second electrode has an edge that is tapered.

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Windsor, CO, United States of America

Hongjun Feng