Globalfoundries Singapore Pte. Ltd.

Honghui Mou

Alex See

Yun Ling Tan

Liang Li

Xiaodong Li

The present disclosure generally relates to methods for cleaning the backside of a wafer. A wet cleaning method may be used by stripping off the uppermost spacer layers on the backside of the wafer using a cleaning solution. In one embodiment, hydrogen fluoride (HF) solution may be employed to remove the nitride/oxide spacer layer. In another embodiment, a dry cleaning method may be employed to etch the wafer at the bevel region. Residues are completely removed from the wafer backside. This method improves the yield and storage life of the semiconductor wafers.

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Singapore, Singapore

Honghui Mou