Semiconductor Manufacturing International (shanghai) Corporation

Hongbo Zhao

Herb He Huang

Haiting Li

Fucheng Chen

Yanghui Xiang

Xinxue Wang

Xingcheng Jin

Zuopeng He

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.

Deep trench isolation for RF devices on SOI

A method is provided for fabricating a semiconductor structure. The method includes providing a substrate having an upper surface and a bottom surface; and forming a deep hole in the substrate from the upper surface. The method also includes forming an amorphous silicon layer on a side surface and a bottom surface of the deep hole to promote a preferred crystal orientation in subsequently formed layers. Further, the method includes forming a barrier layer having a preferred orientation along the (111) crystal face on the barrier layer. Further, the method also includes forming a metal layer having a preferred orientation along the (111) crystal face on the barrier layer to fill the through hole.

Silicon via with amorphous silicon layer and fabrication method thereof

A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.

Method for forming deep trench isolation for RF devices on SOI

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Shanghai, China

Hongbo Zhao