First Solar, Inc.

General Electric Company

Ge Infrastructure Technology, LLC

Hongbo Cao

Donald Franklin Foust

Hongying Peng

Gang Xiong

Joseph John Shiang

Scott Daniel Feldman-Peabody

William Hullinger Huber

Sachit Grover

Xiaoping Li

Yinghui Shan

Narendra Digamber Joshi

Anil Raj Duggal

Holly Ann Comanzo

Krishan Lal Luthra

Roger Malik

Roman Shuba

Wyatt Keith Metzger

Dingyuan Lu

Laura Anne Clark

Robert Andrew Garber

Qianqian Xin

Douglas Carl Hofer

Mohamed Rahmane

Timothy John Sommerer

Julin Wan

Nicholas William Rathay

Peter Joel Meschter

Hongyi Zhou

George Theodore Dalakos

Robert Dwayne Gossman

Sundeep Kumar

Oltea Puica Siclovan

Vidya Ramaswamy

Raghavendra Rao Adharapurapu

Kevin Henry Janora

Holly Ann Blaydes

Anping Zhang

Juan Carlos Rojo

David William Vernooy

Ravikumar Hanumantha

Darren Michael Stohr

Allan Robert Northrup

Yangang Andrew Xi

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10cm. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same

A porous electrolyte structure for a solid state battery is provided. The porous electrolyte structure has an interconnected ceramic matrix with a network of open pores disposed throughout a thickness of the porous electrolyte structure. The porous electrolyte structure includes a porosity of about 20% by volume to about 80% by volume. A solid state battery cell including the porous electrolyte structure and a method of making the solid state battery cell are also provided.

Solid state battery, ceramic electrolyte structure and methods of making

A photovoltaic device () can include an absorber layer (). The absorber layer () can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4&#xd7;10cm. The absorber layer () can include oxygen in a central region of the absorber layer (). The absorber layer () can include an alkali metal in the central region of the absorber layer (). Methods for carrier activation can include exposing an absorber layer () to an annealing compound in a reducing environment (). The annealing compound () can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same

A hypersonic aircraft includes one or more leading edge assemblies that are designed to cool the leading edge of certain portions of the hypersonic aircraft that are exposed to high thermal loads, such as extremely high temperatures and/or thermal gradients. Specifically, the leading edge assemblies may include an outer wall tapered to a leading edge or stagnation point. A coolant supply may be in fluid communication with at least one fluid passageway that passes through the outer wall to deliver a flow of cooling fluid, such as liquid metal, to the stagnation point. The liquid metal vaporizes when the leading edge experiences a high heat load, thereby transpiration cooling the leading edge and/or facilitating a magnetohydrodynamic process for generating thrust or electricity.

System and method for cooling a leading edge of a high speed vehicle

A method for joining a metal component to a ceramic component is presented. The method includes disposing a metallic barrier layer on a metallized portion of the ceramic component, and joining the metal component to the metallized portion of the ceramic component through the metallic barrier layer. The metallic barrier layer comprises nickel and a melting point depressant. The metallic barrier layer is disposed by a screen printing process, followed by sintering the layer at a temperature less than about 1000 degrees Celsius. A sealing structure including a joint between a ceramic component and a metal component is also presented.

Method for joining ceramic to metal, and sealing structure thereof

Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.

Methods of treating a semiconductor layer

Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.

Photovoltaic devices

A method of making a photovoltaic device is presented. The method includes disposing an absorber layer on a window layer. The method further includes treating at least a portion of the absorber layer with a first solution including a first metal salt to form a first component, wherein the first metal salt comprises a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The method further includes treating at least a portion of the first component with cadmium chloride to form a second component. The method further includes treating at least a portion of the second component with a second solution including a second metal salt to form an interfacial layer on the second component, wherein the second metal salt comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Methods of making photovoltaic devices

In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2&#xd7;10Ohm-cm. Method of making a photovoltaic device is also provided.

Method of making a transparent conductive oxide layer and a photovoltaic device

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Hongbo Cao