Future Wei Technologies, Inc.

Huawei Technologies Co., Limited

O-net (usa) Inc.

Hongbing Lei

Xiao Andy Shen

Hongmin Chen

Yu Sheng Bai

Dawei Zheng

Xueyan Zheng

Jianhe Gao

Qianfan Xu

Xuejin Yan

YuSheng Bai

Jianmin Gong

Morgan Chen

Jifang He

Li Ping Yang

Jianying Zhou

Chunlei Liao

Tiangong Liu

Yan Cai

Yangjing Wen

Eric Dudley

Systems and methods are disclosed to provide automatic bias control for intensity modulated silicon modulator by providing a laser light to a Mach-Zehnder modulator (MZM) and splitting the laser light into a first arm and a second arm, wherein light in the first arm experiences a phase section for data modulation and light in the second arm receives heat for bias control and a phase section for data modulation; providing a first output light of the MZM; providing a complementary output light a monitor photodetector (mPD); and applying an uneven spacing 3-level square wave as dither for automatic bias control of MZM which operates at quad point and phase tuning with a heater.

Method and apparatus of automatic bias control for intensity modulated silicon modulator

A wavelength tunable laser includes: a heating layer, a dielectric layer, reflectors, a transport layer, a support layer, and a substrate layer. The heating layer is located above the transport layer; the transport layer is located above the support layer, and the transport layer includes an upper cladding layer, a waveguide layer, and a lower cladding layer from top to bottom; the reflector is located in the transport layer; the support layer has a protection structure, where the protection structure forms a hollow structure together with the transport layer and the substrate layer, and the hollow structure has a support structure; and the substrate layer is located below the support layer. The heating layer, the reflector, and a part of the transport layer form a suspended structure to prevent heat dissipation. Thus thermal tuning efficiency can be improved, and power consumption can be lowered.

Tunable laser and manufacturing method for tunable laser

A tunable laser is provided, including a first reflector, a second reflector, a phase adjustment area, a gain area, a first detector, a second detector, and a controller. The phase adjustment area is located between the first reflector and the gain area, the gain area is located between the phase adjustment area and the second reflector, a reflectivity of the first reflector is adjustable, and a reflectivity of the second reflector is adjustable. The first detector is configured to convert an optical signal of the first reflector into a first electrical signal. The second detector is configured to convert an optical signal of the second reflector into a second electrical signal. The controller is configured to adjust at least one of the reflectivity of the first reflector or the reflectivity of the second reflector based on the first electrical signal and the second electrical signal.

Tunable laser and control method for same

An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Digital optical modulator for programmable n-quadrature amplitude modulation generation

An apparatus comprising a laser comprising an active layer and configured to emit an optical signal, wherein a temperature change of the laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal by applying heat to the active layer.

Thermal compensation for burst-mode laser wavelength drift

An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

Interdigitated optical modulator

A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

MOS capacitor optical modulator with transparent conductive and low-refractive-index gate

An apparatus comprises: a first input tap; a first optical modulator coupled to the first input tap; a first output tap coupled to the first optical modulator so that the first optical modulator is positioned between the first input tap and the first output tap; and a controller indirectly coupled to the first input tap and the first output tap.

Optical modulator bias locking

Methods, apparatus, and systems are provided including an electro-absorption modulator (EAM) with local temperature control for optical communication. One aspect provides an optical EAM including a semiconductor portion configured to modulate light for transmission or reception of an optical signal. The modulator includes a temperature sensing element configured to sense temperature and to provide an output signal based on the sensed temperature, and a temperature control element configured to control temperature of the semiconductor portion based on the output signal from the temperature sensing element. In one example, the semiconductor portion includes germanium silicon (GeSi).

Electro-absorption modulator with local temperature control

A Dual Parallel (DP)-Inphase/Quadrature (I/Q) Mach-Zehnder Modulator (MZM) bias controller configured to generate a pair of orthogonal dither signals; multiply the pair of dither signals to create a second order orthogonal dither signal; and lock an Inphase (I) I MZM of a DP-I/Q MZM to a value of a corresponding I component of a transmission signal by applying the pair of orthogonal dither signal to a Quadrature (Q) MZM and a Phase (P) MZM of the DP-I/Q MZM; applying an I bias signal to the I MZM of the DP-I/Q MZM; detecting an output of the DP-I/Q MZM; and determining an I error signal in the output of the I MZM of the DP-I/Q MZM based on the product of second order dither signal and the output of the DP-I/Q MZM.

Second order detection of two orthogonal dithers for I/Q modulator bias control

An apparatus comprising a burst-mode laser comprising an active layer and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer based on timing of the burst period.

A laser comprises a front mirror (FM), a gain section coupled to the FM, a phase section coupled to the gain section such that the gain section is positioned between the phase section and the FM, and a back mirror (BM) comprising an interferometer and coupled to the phase section such that the phase section is positioned between the BM and the gain section. A method comprises splitting a first light into a second light and a third light, reflecting the second light to form a second reflected light, reflecting the third light to form a third reflected light, and causing the second reflected light and the third reflected light to interfere and combine to form a combined light to narrow a reflectivity peak spectrum width.

Growing community of inventors

San Jose, CA, United States of America

Hongbing Lei