Samsung Electronics Co., Ltd.

Hongbae Park

Sangjin Hyun

Hoonjoo Na

Hye-Lan Lee

Hyung-seok Hong

Hagju Cho

Hyung-Seok Hong

Yugyun Shin

Sughun Hong

Sunghun Hong

Jonghan Lee

Seonghwa Park

Dabok Jeong

Minseok Jo

Jaehyun Lee

A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.

Semiconductor device including fin field effect transistor with separation layer

A method of fabricating a semiconductor device includes forming an interlayer dielectric on a substrate, the interlayer dielectric including first and second openings respectively disposed in first and second regions formed separately in the substrate; forming a first conductive layer filling the first and second openings; etching the first conductive layer such that a bottom surface of the first opening is exposed and a portion of the first conductive layer in the second opening remains; and forming a second conductive layer filling the first opening and a portion of the second opening.

Semiconductor device and method of fabricating the same

Semiconductor device including fin field effect transistor

A semiconductor device and associated methods, the semiconductor device including a semiconductor substrate with a first well region, a first gate electrode disposed on the first well region, and a first N-type capping pattern, a first P-type capping pattern, and a first gate dielectric pattern disposed between the first well region and the first gate electrode.

Semiconductor device

Methods of forming a semiconductor device

Semiconductor device and associated methods

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Seoul, South Korea

Hongbae Park