Az Electronic Materials USA Corp.

Merck Patent Gmbh

Hong Zhuang

Hengpeng Wu

Mark O Neisser

Ping-Hung Lu

Stanley F Wanat

Zhong Xiang

Jianhui Shan

PingHung Lu

Chunwei Chen

Huirong Yao

Joseph E Oberlander

Jian Yin

David J Abdallah

Ruzhi Zhang

Shuji Sue Ding-Lee

Aritaka Hishida

Eleazar B Gonzalez

Robert R Plass

WooKyu Kim

Stanely F Wanat

Douglas Mckenzie

Pinghung Lu

Woo-Kyu Kim

Aritaka Az Electronic Materials KK Hishida

The present invention relates to a composition comprising: where Ris a non-hydrolysable group and n is an integer ranging from 1 to 3; and (b) a crosslinking catalyst. The composition is useful in forming low k dielectric constant materials and as well as hard mask and underlayer materials with anti-reflective properties for the photolithography industry.

Silicone coating composition

The invention relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least one primary organic solvent and at least one secondary organic solvent selected from any of structures 1, 2 and 3, where, R, R, and R, are selected from H and C-Calkyl, and R, R, R, R, R, and Rare selected from C-Calkyl, and n=1-5. The invention also relates to an antireflective coating composition capable of being coated beneath a photoresist layer, where the antireflective coating composition comprises a polymeric crosslinker and a solvent mixture, where the solvent mixture comprises at least 2 organic solvents, and where the antireflective coating composition has a liquid particle count at 0.2 micron of less than 100/ml after accelerated aging.

Solvent mixtures for antireflective coating compositions for photoresists

The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with at least one reactive compound containing at least one hydroxy group and/or at least one acid group, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.

Antireflective compositions for photoresists

The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, The invention further relates to a process for imaging the antireflective coating composition.

Antireflective composition for photoresists

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.

Nanocomposite photoresist composition for imaging thick films

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.

Nanocomposite photosensitive composition and use thereof

A composition that comprises a photopolymerizable compound containing at least two pendant unsaturated groups; at least one ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic monomer; at least one nonionic surfactant; and at least one photoinitiator is provided. The composition also preferably contains at least one amine modified acrylic oligomer and a dye. Other conventional photoresist components such as photosensitizers, adhesion promoters, leveling agents and solvents may also be included in the composition. Such compositions are useful for forming a pattern on a substrate, such as patterning microlithographic circuits on a substrate.

Photosensitive composition and use thereof

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Raritan, NJ, United States of America

Hong Zhuang