University of California

Hong Zhong

Shuji Nakamura

Steven P DenBaars

James Stephen Speck

Anurag Tyagi

John F Kaeding

Kenneth J Vampola

Hitoshi Sato

Rajat Sharma

Michael Iza

Hirokuni Asamizu

A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

High light extraction efficiency nitride based light emitting diode by surface roughening

A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {101} GaN films deposited on {100} MgAlOspinel substrate miscut in the &#x3c;011&#x3e; direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Method for conductivity control of (Al,In,Ga,B)N

A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices

Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes

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Temple City, CA, United States of America

Hong Zhong