Applied Materials, Inc.

Isis Pharmaceuticals, Inc.

Western Digital (fremont), Inc.

Incyte Pharmaceuticals, Inc.

Hitachi Global Storage Technologies Netherlands B.v.

Ionis Pharmaceuticals, Inc.

Incyte Genomics, Inc.

Hong Zhang

Fusen E Chen

Barry Lee Chin

Zheng Xu

Peijun Ding

Gongda Yao

Gene Y Kohara

Tony P Chiang

Surya K Goli

Brett P Monia

Olga Bandman

Susan M Freier

Roderick Craig Mosely

Ted Tie Guo

Andrew M Siwkowski

Jeffrey R Crosby

Chenguang Zhao

Lex M Cowsert

Hua Chung

John C Forster

Xianmin Tang

Praburam Gopalraja

Ge Yi

Dujiang Wan

Guanghong Luo

Neil C Corley

Preeti G Lal

Ming Jiang

Ling Chen

Jianming Fu

Lei Wang

Hung-Chin Guthrie

Hai Sun

Suraj Rengarajan

Xiaohai Xiang

Jennifer L Hillman

Eric E Swayze

C Frank Bennett

Zhigang Bai

Liang-Yuh Chen

Feng Q Liu

Jacqueline R Wyatt

Brenda F Baker

Ying Hong

Yizhong Wang

Jyh-Shuey Jerry Lo

Hyman J Levinstein

Andrew T Watt

Hongping Yuan

Jick M Yu

Wei Gao

Fenglin Liu

Rong Tao

Nitin Khurana

Weimin Si

Winnie Yu

Michael L McCaleb

Xiaoyu Yang

Thomas P Condon

Yunhe Huang

Jikou Zhou

Ling Wang

Wencheng Su

Yunjun Tang

Jenn-Yue Wang

Yuan Yao

Shin Cheng Flournoy

Tiffany Yun Wen Jiang

Zhigang Zhou

Iulica Zana

David Pung

Zhi-Fan Zhang

Disclosed herein are antisense compounds and methods for decreasing Factor 11 and treating or preventing thromboembolic complications in an individual in need thereof. Examples of disease conditions that can be ameliorated with the administration of antisense compounds targeted to Factor 11 include thrombosis, embolism, and thromboembolism, such as, deep vein thrombosis, pulmonary embolism, myocardial infarction, and stroke. Antisense compounds targeting Factor 11 can also be used as a prophylactic treatment to prevent individuals at risk for thrombosis and embolism.

Modulation of factor 11 expression

We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Method for depositing a diffusion barrier layer and a metal conductive layer

We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer, A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

Disclosed herein are antisense compounds and methods for decreasing Factor 7 and treating or preventing thromboembolic complications, hyperproliferative disorders, or inflammatory conditions in an individual in need thereof. Examples of disease conditions that can be ameliorated with the administration of antisense compounds targeted to Factor 7 include thrombosis, embolism, and thromboembolism, such as, deep vein thrombosis, pulmonary embolism, myocardial infarction, stroke, cancer, rheumatoid arthritis, and fibrosis.

Modulation of factor 7 expression

A method and system for providing a magnetic recording transducer having a pole are disclosed. The pole has side(s), a bottom, and a top wider than the bottom. The method and system include providing at least one side gap layer that covers the side(s) and the top of the pole. At least one sacrificial layer is provided on the side gap layer(s). The sacrificial layer(s) are wet etchable and cover the side gap layer(s). The magnetic recording transducer is planarized after the sacrificial layer(s) are provided. Thus, a portion of the side gap and sacrificial layer(s) is removed. A remaining portion of the sacrificial layer(s) is thus left. The method and system also include wet etching the sacrificial layer(s) to remove the remaining portion of the sacrificial layer(s). A wrap around shield is provided after the remaining portion of the sacrificial layer(s) is removed.

Method and system for providing a perpendicular magnetic recording head

Disclosed herein are antisense compounds and methods for decreasing HBV mRNA, DNA and protein expression. Such methods, compounds, and compositions are useful to treat, prevent, or ameliorate HBV-related diseases, disorders or conditions.

Modulation of Hepatitis B virus (HBV) expression

A method for fabricating a magnetic recording transducer having a magnetic writer pole with a short effective throat height is provided. In an embodiment, a writer structure comprising a magnetic writer pole having a trailing bevel and a nonmagnetic stack on the top surface of the writer pole is provided. A dielectric write gap layer comprising alumina is deposited over the trailing bevel section and the nonmagnetic stack; and at least one etch stop layer is deposited over the dielectric write gap layer. A layer of nonmagnetic fill material is deposited over the etch stop layer and to form a nonmagnetic bevel by performing a dry etch process. The etch stop layer(s) are removed from the short throat section; and a trailing shield is deposited over the short throat section, nonmagnetic bevel, and nonmagnetic stack top surface.

Process for manufacturing a perpendicular magnetic recording writer pole with nonmagnetic bevel

A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.

Method for fabricating a structure for a microelectric device

The present invention relates to antisense antidote compounds and uses thereof. Such antidote compounds reduce the magnitude and/or duration of the antisense activity of an antisense compound.

Antidotes to antisense compounds

A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

Enhanced copper growth with ultrathin barrier layer for high performance interconnects

Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. One embodiment provides a method provides a method for processing a substrate comprising forming a seed layer over a substrate having trench or via structures formed therein, coating a portion of the seed layer with an organic passivation film, and immersing the trench or via structures in a plating solution to deposit a conductive material over the seed layer not covered by the organic passivation film.

Bottom up plating by organic surface passivation and differential plating retardation

Growing community of inventors

Fremont, CA, United States of America

Hong Zhang