Shanghai Harvest Intelligence Technology Co., Ltd.

Hong-Yih Tseng

Jiandong Huang

An image sensor () includes a plurality of pixel sensing portion () that are arranged in columns and rows. Each of the pixel sensing portions () includes a thin film transistor (), and a photodetection diode () including n-type (), intrinsic (), and p-type semiconductor layers (). The intrinsic semiconductor layer () of the photodetection diode () of each of the pixel sensing portions () has a crystallinity gradient that varies from an amorphous silicon structure to a microcrystalline silicon structure along a first direction (L) extending from the p-type semiconductor layer () toward the n-type semiconductor layer (). An image sensing-enabled display apparatus () and a method of making the image sensor () are also disclosed.

Image sensor and image sensing-enabled display apparatus including the same, and method of making the image sensor

An image sensor includes a plurality of pixel sensing portions arranged in m columns and n rows. Each of the pixel sensing portions includes at least one thin film transistor and a photodetection diode () including n-type (), intrinsic () and p-type () semiconductor layers. The p-type semiconductor layer () includes a multi-layered structure including lower () and upper () p-type semiconductor layered portions. The upper p-type semiconductor layered portion () has a band gap greater than 1.7 eV and has a p-type dopant in an amount not less than two times of that of the lower p-type semiconductor layered portion (). An image sensing-enabled display apparatus and a method of making the image sensor are also disclosed.

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Tainan, China

Hong-Yih Tseng