South China University of Technology

Tencent Technology (shenzhen) Company Limited

Guangzhou Baier Cold-chain Polyurethane Technology Co., Ltd.

Zte Corporation

Jinan University

South China Agricultural University

Shenzhen Anymore Technology Limited

Guangdong Luckystar Electronic Technology Co., Ltd

Shenzhen Good-machine Automatic Equipment Co., Ltd

Hong Yang Wang

Yu Geng Lin

Chen Ran

Dian Ping Xu

Quanbin Zhou

Jun Zhou

Jing Jing Li

Le Teng Weng

Pin Lin Chen

Zhang Jing Yang

Xiaolong Hu

Rulian Wen

Yi Liu

Hua Yin Huang

Jun Yang

Yong Zhao Tang

Ting Huang

Ke Xu

Jing Wu

Dehui Kong

Tao Zou

Bin Han

Han Qi Zhang

Kai Wang

Guoning Lu

Fan Zhang

Degen Zhen

Xiwei Xu

Enchen Jiang

Guochen Pan

Hong Xiao Yu

Linghao Li

Huamao Huang

Zijing Xie

Ruohe Yao

Lijun Tan

Shudong Yu

Xinrui Ding

Kejian Wu

Guanwei Liang

Zongtao Li

Zhuobo Yang

Haipeng Yu

Wei Shi

Qixin Li

Yan Sun

Shuai Jiao

Chong Xiang

Ju Bo Mo

Qifang Song

Zhongkui Kang

Haowu Jiang

Ning Deng

Peng Ge

Xiang Wang

The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process.

Micro-sized face-up led device with micro-hole array and preparation method thereof

A preparation method for a metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband includes: growing a contact layer thin film () on a substrate () first, and annealing the grown contact layer thin film () in a nitrogen-oxygen atmosphere at 400° C. to 600° C. through a rapid thermal annealing furnace; growing a first GaOthin film () by sputtering through magnetron sputtering under argon conditions; growing a doped thin film () by sputtering through magnetron sputtering under argon conditions; growing a second GaOthin film () by sputtering through magnetron sputtering under argon conditions; and annealing the grown thin films in a nitrogen-oxygen atmosphere at 500° C. to 600° C. through a rapid thermal annealing furnace, so that permeation, diffusion and fusion occur between thin film materials to form a metal-doped GaOthin film (). A metal-doped gallium oxide transparent conductive thin film for ultraviolet waveband is provided.

Conductive thin film for ultraviolet waveband and preparation method therefor

The present invention discloses a welding method of a demetallized ceramic substrate having a surface capillary microgroove structure. The demetallized ceramic substrate includes a ceramic substrate main body and surface capillary microstructures. The surface capillary microstructures are arranged on two lateral sides of the ceramic substrate main body and the surface capillary microstructures specifically are capillary microgrooves. The welding method includes the following steps: fixing a chip to an upper surface of the demetallized ceramic substrate having the surface capillary microgroove structure, fixing the ceramic substrate with the chip to a printed circuit board having a bonding pad, and placing melted solder on the bonding pad, and driving the solder to ascend to an electrode of the chip from the bonding pad in a lower layer by means of a capillary force, thereby realizing an electrical connection between the chip and the printed circuit board.

Welding method of demetallized ceramic substrate having surface capillary microgroove structure

The invention discloses an adjusting structure and a stand for photographic apparatus. The adjusting structure includes a first adjusting rod, a first connecting member, a second connecting member, a second adjusting rod, a first locking member and a supporting member. The first connecting member is fixedly connected with the first adjusting rod, the second connecting member is rotationally connected with the first connecting member and is provided with a first mounting hole, wherein the second connecting member can be rotated relative to the first connecting member to adjust an included angle with the first connecting member, the second adjusting rod is penetrated through the first mounting hole and movablely connected with the first adjusting rod, and can be moved relative to the first adjusting rod along a straight direction.

Adjusting structure and stand for photographic apparatus

Provided is a method for upgrading pyrolysis oil through seawater electrochemical pretreatment of biomass and use thereof. The method includes: (1) crushing and sieving a biomass raw material to obtain a crushed biomass raw material, adding the crushed biomass raw material to a salt solution and mixing to be uniform to obtain a reactant mixture; performing an electrolytic reaction on the reactant mixture under conditions of stirring and an external voltage of 5-15 V for 2-8 hours to obtain a product mixture; after the electrolytic reaction, subjecting the product mixture to a suction filtration, collecting a filter cake, washing the filter cake and drying to obtain a pretreated biomass, and (2) subjecting the pretreated biomass obtained in step (1) to a pyrolysis reaction at a temperature of 400-600&#xb0; C. for 30-90 minutes in a protective gas atmosphere, and collecting a pyrolysis oil by an organic solvent.

Method for upgrading pyrolysis oil through seawater electrochemical pretreatment of biomass feedstock

An epitaxial structure of a GaN-based radio frequency device based on a Si substrate and a manufacturing method thereof are provided. The epitaxial structure is composed of a Si substrate (), an AlN nucleation layer (), AlGaN buffer layers (), a GaN:Fe/GaN high-resistance layer (), a GaN superlattice layer (), a GaN channel layer (), an AlGaN barrier layer () and a GaN cap layer () which are stacked in turn from bottom to top, wherein the GaN:Fe/GaN high-resistance layer () is composed of an intentional Fe-doped GaN layer and an unintentional doped GaN layer which are alternately connected; the GaN superlattice layer () is composed of a low-pressure/low V/III ratio GaN layer and a high-pressure/high V/III ratio GaN layer which are periodically and alternately connected.

Epitaxial structure of GaN-based radio frequency device based on Si substrate and its manufacturing method

A virtual reality display method, device, apparatus and storage medium are provided. The method includes: acquiring multimedia data to be displayed and a visible region of a viewer on a curved display surface, wherein the visible region is obtained by projecting a visible range of the viewer to the curved display surface, and is not larger than a display area of the curved display surface; determining target curvatures of at least two positions in the visible region of the viewer, wherein in the target curvatures, target curvatures of different positions are related to a distance to a center of the visible region of the viewer; adjusting, based on the target curvatures of the at least two positions in the visible region, a curvature of a corresponding position on the curved display surface; and mapping the multimedia data to be displayed to the curved display surface having the adjusted curvature.

Virtual reality display method, device and apparatus, and computer storage medium

Portion of a display having a graphical user interface

An efficient wide bandgap GaN-based LED chip based on a surface plasmon effect and a manufacturing method therefor. The efficient wide bandgap GaN-based LED chip is of a flip-chip structure, and comprises, from bottom to top in sequence, a substrate, a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, a quantum well layer, an electron blocking layer, a p-GaN layer, a metallic reflecting mirror layer, a passivation layer, a p-electrode layer, an n-electrode layer; and a position of a bottom surface of the metallic reflecting mirror layer connected to a surface of the p-GaN layer is provided with a micro-nano composite metal structure. A micro metal structure comprises alternating protrusion portions and recess portions; and a nano metal structure is distributed on an interface of the micro metal structure and the p-GaN layer.

Efficient wide bandgap GaN-based LED chip based on surface plasmon effect and manufacturing method therefor

The present invention provides a GaN-based microwave power device with a large gate width and manufacturing method thereof. The device includes an AlGaN/GaN heterojunction epitaxial layer, a first dielectric layer overlying the AlGaN/GaN heterojunction epitaxial layer, a strip-like source electrode, a drain electrode distributed in a shape of a fishbone, an annular gate electrode, a second dielectric layer separating upper and lower electrodes, and an interconnect metal electrode pad. The GaN-based microwave power device with the large gate width prepared according to the present invention, has a small phase shift of the signals, a small parasitic capacitance of the device, a high signal gain, high power added efficiency and a high output power. At the same time, the manufacturing process of the device is simple, the chip area is saved, and the device has a good repeatability.

GaN-based microwave power device with large gate width and manufacturing method thereof

A two-dimensional code, a two-dimensional code generation method, identification method, generation apparatus, and identification apparatus, and a storage medium are provided. The two-dimensional code includes a square module array including an array of m*m modules, a location detection pattern and a data information pattern. The location detection pattern determines a location of the two-dimensional code, the data information pattern is configured to carry data information, each module of the array of m*m modules is at least one of a first-type module and a second-type module, a color attribute of the first-type module is different from a color attribute of the second-type module, and m is at least one of 17, 18, 19, and 20.

Object on which two-dimensional code is disposed, and two-dimensional code generation method, identification method, generation apparatus, and identification apparatus

A method for detecting a two-dimensional barcode is provided. Binarization processing is performed on an image to obtain a binary image. Whether the binary image has a target pattern is determined, and it is determined that the binary image has a two-dimensional barcode in response to determining that the binary image has the target pattern. An enlarged image of the two-dimensional barcode is obtained, and two-dimensional barcode detection is performed on the enlarged image of the two-dimensional barcode.

Method and apparatus for detecting two-dimensional barcode

The present invention provides a double freeform-surface lens with uniform color temperature including an incident free surface, an emergent freeform-surface and a side connecting face. The side connecting face is a side wall connecting the incident freeform-surface and the emergent freeform-surface. Aiming at impacts of using the single lens on color temperature upon LED light distribution, the double freeform-surface lens is designed, which is fabricated from a transparent optical material. The transparent material is PC or PMMA or optical glass. The double freeform-surface lens is capable of controlling a light distribution angle, and light spots obtained have uniform color temperature.

Double freeform-surface lens with uniform color temperature

An enhancement-mode GaN-based HEMT device on Si substrate and a manufacturing method thereof. The device includes a Si substrate, an AlN nucleation layer, AlGaN transition layers, an AlGaN buffer layer, a low temperature AlN insertion layer, an AlGaN main buffer layer, an AlGaN/GaN superlattice layer, an GaN channel layer, and an AlGaN barrier layer. Both sides of a top end of the HEMT device are a source electrode and a drain electrode respectively, and a middle of the top end is a gate electrode. A middle of the AlGaN barrier layer is etched through to form a recess, and a bottom of the recess is connected to the GaN channel layer. A passivation protective layer and a gate dielectric layer are deposited on the bottom of the recess, and the gate electrode is located above the dielectric layer.

Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method thereof

Growing community of inventors

Guangdong, China

Hong Yang Wang