Taiwan Semiconductor Manufacturing Comp. Ltd.

Hong-Yang Chen

Kuo-Ming Wu

Yi-Min Chen

Chiu-Hua Chung

Yi-Cheng Chiu

Hung-Chou Lin

Tian Sheng Lin

A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Growing community of inventors

Hsinchu, Taiwan

Hong-Yang Chen