Hermes Microvision Inc.

Kla Tencor Corporation

Kla Corporation

A 10 Networks, Incorporated

Hermes-epitek Corporation

Hong Xiao

Jack Jau

Wei Fang

Gary Fan

Ximan Jiang

Harsh Sinha

Chang Chun Yeh

Vivekanand Kini

David Chen

Abdurrahman Sezginer

Zhongwei Chen

Alan D Brodie

Nadav Gutman

Dennis Isao Oshiba

Joe Wang

Lawrence Muray

Grace Hsiu-Ling Chen

Daniel Tang

Yi-Xiang Wang

John Gerling

Michael John Van Riet

Qiang Q Zhang

Yi Xiang Wang

Paul Douglas MacDonald

Cecelia Anne Campochiaro

Sameet K Shriyan

Christopher Maher

Kuljit Virk

David Kaz

Edward Tseng

Rohit Bothra

Benjamin James Thomas Clarke

Huina Xu

Dmitry Spivak

Kumar Raja Guvindan Raju

Nick Petrone

Wade Lenn Jensen

Lorraine Ellen Young

A device area includes at least a first layer of photoresist and a second layer of photoresist. First layer metrology targets are positioned at an edge of one of the sides of the first layer of the mat. The first layer metrology targets have a relaxed pitch less than a device pitch. Secondary electron and back-scattered electron images can be simultaneously obtained.

Overlay measurement targets design

A system is disclosed. In one embodiment, the system includes a scanning electron microscopy sub-system including an electron source configured to generate an electron beam and an electron-optical assembly including one or more electron-optical elements configured to direct the electron beam to the specimen. In another embodiment, the system includes one or more grounding paths coupled to the specimen, the one or more grounding paths configured to generate one or more transmission signals based on one or more received electron beam-induced transmission currents. In another embodiment, the system includes a controller configured to: generate control signals configured to cause the scanning electron microscopy sub-system to scan the portion of the electron beam across a portion of the specimen; receive the transmission signals via the one or more grounding paths; and generate transmission current images based on the transmission signals.

Defect inspection and review using transmissive current image of charged particle beam system

A system for generating and implementing programmed defects includes a lithography tool configured to form a multi-pattern structure including a first array pattern and a second array pattern on a sample. The first array pattern or the second array pattern contains a programmed defect to differentiate the first array pattern from the second array pattern. The system includes a metrology tool configured to acquire one or more images of the first array pattern and the second array pattern having a field-of-view containing the programmed defect. The system includes a controller including one or more processors. The one or more processors are configured to receive the images of the first array pattern and the second array pattern from the metrology, and determine a metrology parameter associated with the first array pattern or the second array pattern.

Method and system for generating programmed defects for use in metrology measurements

Disclosed are apparatus and methods for performing overlay metrology upon a target having at least two layers formed thereon. A target having a plurality of periodic structures for measuring overlay in at least two overlay directions is provided. A charged particle beam is scanned in a first direction across a plurality of scan swaths of the target and at a first tilt with respect to the target so that each edge of the periodic structures is scanned at an angle. The charged particle beam is scanned in a second direction, which is opposite the first direction, across the plurality of scan swaths and at a second tilt that is 180&#xb0; from the first tilt. The first and second direction scanning operations are then repeated for different first and second tilts and a different plurality of scan swaths of the target so that the target is scanned symmetrically. Images that are generated by the first and second direction scanning operations are combined to form a combined image, and an overlay error of the target is determined and reported based on analyzing the combined image.

Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system

Provided are methods and systems for allocating resources in a multi-core computing environment. The method comprises selecting, by one or more processors, at least one dedicated core for execution of a resource allocation algorithm. After selection of the dedicated core, the dedicated core allocates, based on the resource allocation algorithm, a network resource to a client. Furthermore, the dedicated core assigns the network resource to network packets associated with the client for processing by data cores. After the assigning of the network resource, the data cores process the network packets according to the allocated network resource.

Allocating resources in multi-core computing environments

A system for measuring cathodoluminescence from a substrate includes an electron beam source configured to generate an electron beam, a sample stage configured to secure a sample and an electron-optical column including a set of electron-optical elements to direct at least a portion of the electron beam through onto a portion of the sample. The system also includes a set of guide optics located at a position within or below the electron-optical column and a set of collection optics, wherein the set of guide optics captures cathodoluminescent light emitted from the sample in response to the electron beam and directs the cathodoluminescent light to the set of collection optics. In addition, the system includes a detector. The set of collection optics is configured to image the cathodoluminescent light onto the detector.

System and method for cathodoluminescence-based semiconductor wafer defect inspection

An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.

High-speed hotspot or defect imaging with a charged particle beam system

A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Method and system for adaptively scanning a sample during electron beam inspection

One embodiment relates to a method for automated review of defects detected in a defective die on the target substrate. The method includes: performing an automated review of the defects using an secondary electron microscope (SEM) so as to obtain electron-beam images of the defects; performing an automated classification of the defects into types based on morphology of the defects as determined from the electron-beam images; selecting defects of a specific type for automated energy-dispersive x-ray (EDX) review; and performing the automated EDX review on the defects of the specific type. In addition, automated techniques are disclosed for obtaining an accurate reference so as to improve the usefulness of the EDX results. Furthermore, an automated method of classifying the defects based on the EDX results is disclosed which provides a final pareto that combines both morphological and elemental information. Other embodiments, aspects and features are also disclosed.

Automated decision-based energy-dispersive x-ray methodology and apparatus

One embodiment relates to an electron beam apparatus for inspection and/or review. An electron source generates a primary electron beam, and an electron-optics system shapes and focuses said primary electron beam onto a sample held by a stage. A detection system detects signal-carrying electrons including secondary electrons and back-scattered electrons from said sample, and an image processing system processes data from said detection system. A host computer system that controls and coordinates operations of the electron-optics system, the detection system, and the image processing system. A graphical user interface shows a parameter space and provides for user selection and activation of operating parameters of the apparatus. Another embodiment relates to a method for detecting and/or reviewing defects using an electron beam apparatus. Other embodiments, aspects and features are also disclosed.

Enhanced defect detection in electron beam inspection and review

One embodiment relates to a method of preparation of a sample of a substrate for sub-surface review using a scanning electron microscope apparatus. A defect at a location indicated in a first results file is re-detected, and the location of the defect is marked with at least one discrete marking point having predetermined positioning relative to the location of the defect. The location of the defect may be determined relative to the design for the device, and a cut location and a cut angle may be determined in at least a partly-automated manner using that information. Another embodiment relates to a system for preparing a sample for sub-surface review. Another embodiment relates to a method for marking a defect for review on a target substrate. Other embodiments, aspects and feature are also disclosed.

Systems and methods for preparation of samples for sub-surface defect review

A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.

Method and system for measuring critical dimension and monitoring fabrication uniformity

One embodiment relates to a method of detecting a buried defect in a target microscopic metal feature. An imaging apparatus is configured to impinge charged particles with a landing energy such that the charged particles, on average, reach a depth within the target microscopic metal feature. In addition, the imaging apparatus is configured to filter out secondary electrons and detect backscattered electrons. The imaging apparatus is then operated to collect the backscattered electrons emitted from the target microscopic metal feature due to impingement of the charged particles. A backscattered electron (BSE) image of the target microscopic metal feature is compared with the BSE image of a reference microscopic metal feature to detect and classify the buried defect. Other embodiments, aspects and features are also disclosed.

Method and apparatus for detecting buried defects

Growing community of inventors

Pleasanton, CA, United States of America

Hong Xiao