Siltron, Inc.

Hong Woo Lee

Young Ho Hong

Man Seok Kwak

Sang Hee Kim

Hyon-Jong Cho

Ill Soo Choi

Ill-Soo Choi

A silicon single crystal ingot growing apparatus for growing a silicon single crystal ingot based on a Czochralski method The silicon single crystal ingot growing apparatus includes a chamber; a crucible provided in the chamber, and for containing a silicon melt; a heater provided at the outside of the crucible and for heating the silicon melt; a pulling unit for ascending a silicon single crystal grown from the silicon melt; and a plurality of magnetic members provided at the outside of the chamber and for asymmetrically applying a magnetic field to the silicon melt Such a structure can uniformly controls an oxygen concentration at a rear portion of a silicon single crystal ingot using asymmetric upper/lower magnetic fields without replacing a hot zone In addition, such a structure can controls a flower phenomenon generated on the growth of the single crystal by the asymmetric magnetic fields without a loss such as the additional hot zone (H/Z) replacement, P/S down, and SR variance.

Silicon single crystal ingot and wafer, growing apparatus and method thereof

The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20&#xb0; C./cm in the temperature range of 1000 to 1100&#xb0; C.

Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same

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Gumi, South Korea

Hong Woo Lee