Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Other

Hong Woo Lee

Sung Man Kim

Jong Han Lee

Yong Woo Lee

Beom Jun Kim

Jong Hwan Lee

Yong Jo Kim

Do Gi Lim

Jong Hyuk Lee

Yong Zu Kim

Sang Woo Park

Yoon Ho Kim

Shin Tack Kang

Noboru Takeuchi

Ji Hye Heo

Yong Koo Kang

Seong Yeol Syn

Kye-Jung Shin

Min Soo Kang

Kyung-Hee Kim

Il Hong Suh

Yong Ho Chung

Myung Koo Hur

Sang Joo Lee

Bong Suk Ko

Jae Doo Huh

Sang Youn Han

Hye Rhee Han

Yeon Kyu Moon

Dong Kin Kim

A gate driving circuit is provided. A gate driving circuit comprises a pull-up control unit including a control transistor, a pull-up unit, a carry unit which outputs a clock signal into a kth carry signal and a pull-down unit which pulls down a control node to an off voltage, wherein the control transistor includes one electrode and the other electrode connected to the control node, the one electrode and the other electrode being disposed on a gate electrode such that the one electrode and the other electrode being insulated from the gate electrode, wherein the gate electrode and the other electrode are disposed not to be overlapped with each other, and a distance between an upper surface of the gate electrode and a lower surface of the one electrode is longer than that of the upper surface of the gate electrode and a lower surface of the other electrode.

Gate driving circuit and display device comprising the same

A display panel includes a gate driver connected to a gate line, where the gate driver includes a plurality of stages, where each of the stages includes at least one dual gate thin film transistor having a first control terminal and a second control terminal, and where each of the stages receives a clock signal, a first low voltage, a second low voltage, at least one transmission signal of previous stages, at least two transmission signals of subsequent stages and an output control signal from one of the stages to output a gate voltage including a gate-on voltage and a gate-off voltage.

Display panel including dual gate thin film transistor

A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate

The present invention relates to a module and method for detecting a defect of a thin film transistor (TFT) substrate, which can detect disconnection of a gate line of the TFT substrate having gate drivers provided with a dual structure in which the gate drivers are provided at both sides of the gate lines. There is provided a module and method for detecting a defect of a TFT substrate, wherein gate lines are separated into two portions by cutting a central region of the gate lines, gate power is supplied to the gate lines of which central portions are cut through gate drivers provided at both sides of the gate lines, and a signal of a negative voltage level is supplied to data lines, so that disconnection of the gate lines can be detected.

Module and method for detecting defect of thin film transistor substrate

A thin film transistor substrate includes; a substrate, a plurality of gate lines disposed on the substrate, a plurality of data lines disposed substantially perpendicular to the gate lines, wherein the plurality of data liens include a plurality of outermost data lines, a plurality of thin film transistors ('TFTs') connected to the gate and data lines, a plurality of pixel electrodes connected to the plurality of TFTs, and a plurality of dummy patterns connected to the outermost data lines.

Thin film transistors substrate and liquid crystal display having the same

The present invention relates to carbapenem derivatives of Formula I, wherein X is carbonyl or sulfonyl, and a preparation method thereof. The carbapenem derivatives of the invention have excellent antibacterial properties and are thus useful as antibiotics.

Carbapenem derivatives and a preparation method thereof

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Asan-si, South Korea

Hong Woo Lee