The South China University of Technology

Guang Zhou New Vision Opto-electronic Technology Co., Ltd.

Hong Tao

Lei Wang

Junbiao Peng

Hua Xu

Miao Xu

Min Li

Hongmeng Li

Jianhua Zou

Lei Zhou

Zikai Chen

Jian Hua Zou

Wencong Liu

Provided are a display panel and a display device. The display panel includes at least two display units. Each display unit includes a substrate, a flexible substrate, a light-emitting unit circuit layer and at least one driver chip. The rigid substrate includes a display bearing region and a splicing region located on at least one side of the display bearing region. The flexible substrate is located on a first surface of the rigid substrate and located in the display bearing region, and the flexible substrate at least partially extends out of the display bearing region of the rigid substrate. The light-emitting unit circuit layer is located on a surface of one side of the flexible substrate away from the rigid substrate and includes at least one bonding pad.

Display panel and display device

Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus. The method for preparing the organic electroluminescent device includes: providing a substrate; forming, on the substrate, a red light reflective electrode located in a red sub-pixel preparation region, a green light reflective electrode located in a green sub-pixel preparation region, and a blue light reflective electrode located in a blue sub-pixel preparation region; forming a transparent insulating layer on a surface of a side of the red light reflective electrode facing away from the substrate, where the area of the transparent insulating layer is smaller than the area of the red light reflective electrode; and forming a transparent conductive layer on a surface of a side of the transparent insulating layer facing away from the substrate, a surface of the side of the red light reflective electrode facing away from the substrate and not covered by the transparent insulating layer, and a surface of a side of the green light reflective electrode facing away from the substrate.

Method for preparing organic electroluminescent device, and organic electroluminescent device and display apparatus

Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

Pixel circuit, driving method for pixel circuit, and display panel

The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (InO)(MO)(RO)semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

Metal oxide (MO semiconductor and thin-film transistor and application thereof

The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R' into an indium-containing MO semiconductor to form an InMRR&#x2032;Osemiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

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Guangzhou, China

Hong Tao