Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Soulbrain Co., Ltd.

Techno Semichem Co., Ltd.

Hong-Sick Park

Jong-Hyun Choung

Bong-Kyun Kim

Byeong-Jin Lee

Sun-Young Hong

Shi-Yul Kim

Won-Suk Shin

Wang-Woo Lee

Young-Chul Park

In-Ho Yu

Suck-Jun Lee

Sang-Hoon Jang

Sang-Gab Kim

Sung-Chul Kang

Byung-Uk Kim

Joon-Woo Lee

Young-Jun Jin

Young-Jin Yoon

Suk-Il Yoon

Jong-Hyun Jeong

Chang-Oh Jeong

Sang-tae Kim

Joo-Ae Youn

Sam-Young Cho

Nam-Seok Suh

Soon-Beom Huh

Ki-beom Lee

In-Bae Kim

O-Byoung Kwon

Min-Ki Lim

Byeong-Beom Kim

Yang-Ho Bae

Pil-Sang Yun

Doo-Hee Jung

Seon-Il Kim

Wy-Yong Kim

Hee-Hwan Choe

Seong-Bae Kim

Jae-Woo Jeong

Hong-Je Cho

Won-Guk Seo

Hong-Long Ning

Tai-Hyung Rhee

Yong-Sung Song

Jang-Soo Kim

Je-Hun Lee

Ki-Won Kim

Woo-Geun Lee

Min-Seok Oh

Young-Wook Lee

Jin-Ho Ju

Hong-Kee Chin

Sang-woo Kim

Wang Woo Lee

Shin-Il Choi

Jong-In Kim

Jae-Hyoung Youn

Young-Joo Choi

Hyun-Cheol Shin

Gyu-po Kim

Won-guk Seo

Hyun-cheol Shin

Gi-Yong Nam

Kyong-Min Kang

Dong-Ki Kim

Seung-Jae Yang

Kui-Jong Baek

In Seol Kuk

Hyung Jun Kim

Jeong-Min Park

Mun-Pyo Hong

Do-Hyun Kim

Bo-Sung Kim

Sang Gab Kim

Sang-Woo Kim

Keun-Kyu Song

Yu-Jin Lee

Soo-Guy Rho

Young-woo Park

Jean-Ho Song

Eun-Guk Lee

Yu-Kyung Lee

Ji-Young Park

Seung-yong Lee

Gyungmin Baek

Sangwoo Sohn

Hyun-Eok Shin

Yong-Mo Choi

Soo-wan Yoon

Yong-Hwan Ryu

Young-jun Kim

Sung-Haeng Cho

Hyun-Kyu Lee

Sang-Won Shin

Bong-Woo Lee

Sae-Tae Oh

Sung-Ho Kang

Joo-Ae Yoon

Seung-yeon Han

Young-Min Moon

A display substrate may include a substrate and a wiring on the substrate. The wiring may include a metal oxide layer including at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and including copper (Cu), and a thickness of the metal oxide layer may be in a range of about 30 angstroms (Å) to about 50 Å.

Display substrate, manufacturing method therefor, and display device including same

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.

Etchant and method of manufacturing display device by using the same

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Etchant composition and method of forming metal wire and thin film transistor array panel using the same

An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.

Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant

A method of forming a metal pattern includes disposing a gate metal layer on a substrate; disposing a photoresist layer on the gate metal layer; etching portions of the photoresist layer to form a first photo pattern; etching portions of the gate metal layer to form a gate pattern including a gate electrode, in which the gate metal layer is patterned using the first photo pattern as a mask; ashing an end portion of the first photo pattern to form a second photo pattern; disposing a first gate insulating layer over the substrate and the second photo pattern; removing the second photo pattern and a portion of the first gate insulating layer disposed over the second photo pattern; and disposing a second insulating layer over the gate pattern and the remaining portions of the first gate insulating layer.

Method of forming a metal pattern and method of manufacturing a display substrate

An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.

Etchant, display device and method for manufacturing display device using the same

An etching composition and a method of manufacturing a display substrate using the etching composition are disclosed. The etching composition includes phosphoric acid (HPO) of about 40% by weight to about 70% by weight, nitric acid (HNO) of about 5% by weight to about 15% by weight, acetic acid (CHCOOH) of about 5% by weight to about 20% by weight, and a remainder of water. Thus, a metal layer including copper may be stably etched.

Etching composition and method of manufacturing a display substrate using the system

An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Etchant composition, and method of manufacturing a display substrate using the same

The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.

Etchant for electrode and method of fabricating thin film transistor array panel using the same

A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiN) and a silicon oxide (SiO). The second insulation pattern is on the first insulation pattern and includes a remaining one of the silicon nitride (SiN) and the silicon oxide (SiO).

Display substrate and method of manufacturing the same

A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.

Method for manufacturing a liquid crystal display

An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Etching composition, method of forming a metal pattern and method of manufacturing a display substrate

An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.

Etchant for metal layer including copper or a copper alloy, method of manufacturing a display substrate using the same and display substrate

Growing community of inventors

Suwon-si, South Korea

Hong-Sick Park