Samsung Electronics Co., Ltd.

Hong-Shik Shin

Tae-Gon Kim

Yuichiro Sasaki

A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

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Hwaseong-si, South Korea

Hong-Shik Shin