Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Hong Shik Shim

Jae Ik Lim

Young Chan Kim

Chul Ho Jeong

Hae Yun Choi

In Seo Kee

Ick Hwan Ko

Young Gu Lee

Jin Woo Choi

A stretchable display device includes: a stretchable substrate; a plurality of light emitting units on the stretchable substrate; and a plurality of reflective mirrors positioned to correspond to the light emitting units, respectively, and reflecting light emitted from the light emitting units, respectively.

Stretchable display device

An OLED display includes a first substrate, a first electrode on the first substrate, a pixel defining layer having a first aperture exposing the first electrode, an organic light emitting layer on the first electrode, a second electrode on the organic light emitting layer, a second substrate disposed to face the first substrate, a black matrix disposed on the second substrate and having a second aperture, and a lens disposed to cover at least a part of the second aperture and protruding toward the first substrate.

Organic light emitting diode device

A dust sensor includes a multi-wavelength light source, a receiver, and a controller. The light source emits light of different wavelengths. The receiver generates one or more acoustic wave measurement values based on acoustic waves irradiated from the light source to air particles. The controller controls at least one flickering cycle of the light source, determines the type particles based on the acoustic wave measurement values, and calculates the concentration of particles. The controller calculates the concentration of particles in proportion to an intensity of the acoustic wave measurement values, and determine the type of particles based on the acoustic wave measurement values. The acoustic waves are generated differently based on wavelengths of light emitted from the multi-wavelength light source.

Dust sensor and electronic product using the same

Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, leading to more economical thin film transistors. The thin film transistor manufactured using the method of example embodiments may be used as a switching element for sensors, memory devices, optical devices, and active matrix flat panel displays.

Method of manufacturing thin film transistor including forming a bank for ink jet printing

Disclosed is a method for manufacturing an electrode of an electrochromic display. The method includes, prior to forming a porous nanoelectrode, forming a barrier rib for separating an electrolyte using a photosensitive paste as a material for the barrier rib, in which the photosensitive paste enables formation of patterns through a photolithographic process and maintains its shape at 450&#xb0; C. to 500&#xb0; C. The use of the electrode enables fabrication of an electrochromic display that is capable of preventing cross-talk between pixels and has advantages of fast response speed, prolonged lifespan upon repeated use and improved electrochromism, when compared to the case of metal oxide electrodes.

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Seoul, South Korea

Hong Shik Shim