Lam Research Corporation

Applied Materials, Inc.

Other

Fmc Corporation

Appleid Materials, Inc

Hong Shih

Armen Avoyan

Duane Outka

John Edward Daugherty

Nianci Han

Tuochuan Huang

Catherine Zhou

Li Xu

Cliff La Croix

Yan Fang

Lin Xu

Danny Chien Lu

Diana Xiaobing Ma

Jason Augustino

Sivakami Ramanathan

Cliff LaCroix

Jennifer Y Sun

Jie Yuan

Fred Egley

Robert G O'Neill

Daxing Ren

Bruno Morel

Stephen Whitten

John Michael Kerns

Michael S Kang

Tom Stevenson

Anthony L Chen

Raphael Casaes

Amir A Yasseri

Jack Kuo

Yaobo Yin

Girish M Hundi

Yang Zhang

Yan Ye

Qian Fu

Xikun Wang

Chun Yan

Hui W Chen

Jon McChesney

Brian K McMillin

Saurabh J Ullal

Shenjian Liu

Allan Kent Ronne

Satish Srinivasan

Manuel Sarkis Mekhjian

Joe F Sommers

Russell Ormond

Paul Mulgrew

Chunhong Zhou

William Charles

Harmeet Singh

Robert G Anderson

Wai-Fan Yau

Gerald Z Yin

Eric A Pape

Yang Pan

Allen Richard Zhao

Fangli J Hao

Shashank C Deshmukh

Dean Jay Larson

Wenbing Yang

Mohammad Kamarehi

Christopher Kimball

David M Schaefer

Jerome S Hubacek

Enrico Magni

Shun Jackson Wu

Steve S Mak

David Z Carman

Steve S Y Mak

Gregory James Goldspring

Samantha Siamhwa Tan

Tamal Mukherjee

Bi Ming Yen

Ambarish Chhatre

Peter Chang-Lin Hsieh

Oana M Leonte

Ran Lin

Rish Chhatre

David Joseph Wetzel

Xiaomin Bin

Anbei Jiang

Neal K Newton

Jeremy Chang

Lihua Li Huang

Siwen Li

Robin Koshy

Kennet Baylon

G Grant Peng

Nash W Anderson

Linda Jiang

Gregory A Pilgrim

Clifford Erik La Croix

Tae Won Kim

Dae J Lim

Michael C Willson

Peter Holland

Josh Cormier

Michael C May

Dougyong Sung

A method of cleaning residue containing ruthenium (Ru) residue on at least one surface of a component of a semiconductor processing chamber is provided. The residue is exposed to a Ru cleaning composition comprising at least one of hypochlorite and Obased chemistries, wherein the Ru cleaning composition removes the Ru residue.

Method of cleaning chamber components with metal etch residues

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10/K. A metal oxide layer is then disposed over a surface of the component body.

Method for conditioning semiconductor processing chamber components

A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

Conditioning chamber component

A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Method for conditioning a ceramic coating

A method for providing a part with a plasma resistant ceramic coating for use in a plasma processing chamber is provided. A patterned mask is placed on the part. A film is deposited over the part. The patterned mask is removed. A plasma resistant ceramic coating is applied on the part.

Method to selectively pattern a surface for plasma resistant coat applications

An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

A method for conditioning a ceramic layer with a thickness of less than 150 &#x3bc;m over a substrate is provided. The ceramic layer is cleaned. A region of the ceramic layer is scanned with a pulsed excimer laser beam at a repetition rate of 3-300 Hz.

Surface coating treatment

A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.

Electrostatic chuck cleaning fixture

A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300&#xb0; C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.

Method for conditioning silicon part

A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus

In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.

Dual phase cleaning chambers and assemblies comprising the same

A dielectric window cleaning apparatus may be used for cleaning a dielectric window of a plasma processing device. The dielectric window cleaning apparatus may comprise a window support base, a fluid containing enclosure, a window rotating mechanism, a spray arm, and multiple fluid spraying nozzles. The fluid containing enclosure may include at least one overflow containment sidewall and may be located at least partially under and at least partially around a portion of the window support base. The window rotating mechanism may be operatively connected to the window support base and may rotate the window support base. The spray arm may be in fluid communication with a fluid source and may include a fluid flow channel. The multiple fluid spraying nozzles may each expel fluid from the fluid flow channel in a window cleansing spray.

Dielectric window cleaning apparatuses

A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Dense oxide coated component of a plasma processing chamber and method of manufacture thereof

A particle removal tool having a sound field transducer, a cleaning chamber, and an open sealing face. The cleaning chamber having a cleaning fluid guiding chamber extending from the sound field transducer to the open sealing face, a cleaning fluid delivery channel in fluid communication with the cleaning fluid guiding chamber, and a cleaning fluid return channel. The open sealing face has a cleaning portal disposed contiguous with a plane formed by the open sealing face and a chamber-to-surface interface seal which forms a fluid tight seal with a cleaning surface plane. The sound field transducer is disposed within a line-of-sight of the cleaning portal and generates acoustic waves with a frequency between approximately 20 kHz and approximately 2 MHz.

Portable sonic particle removal tool with a chemically controlled working fluid

An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Adapter plate for polishing and cleaning electrodes

Growing community of inventors

Walnut, CA, United States of America

Hong Shih