Samsung Electronics Co., Ltd.

Hong Seong Kang

Yoonhae Kim

Junjie Xiong

Youshin Choi

Yoonseok Lee

A semiconductor device includes a substrate having an active region and a device isolation layer defining the active region, a gate electrode on the active region, source/drain regions at the active region at both sides of the gate electrode, a buffer insulating layer on the device isolation layer, an etch stop layer formed on the buffer insulating layer and extending onto the gate electrode and the source/drain region, a first interlayer insulating layer on the etch stop layer, a first contact and a second contact penetrating the first interlayer insulating layer and the etch stop layer. The first contact and the second contact are spaced apart from each other and are in contact with the source/drain region and the buffer insulating layer, respectively.

Semiconductor device and method of forming the same

Methods of forming integrated circuit devices include forming first and second gate electrodes at side-by-side locations on a substrate and forming first and second sidewall spacers on sidewalls of the first gate electrode and the second gate electrode, respectively. The first and second gate electrodes are covered with a first electrically insulating layer of a first material. A second electrically insulating layer of a second material is deposited on the first electrically insulating layer. The second electrically insulating layer is patterned to define a first opening therein that exposes an underlying first portion of the first electrically insulating layer.

Growing community of inventors

Hwaseong-si, South Korea

Hong Seong Kang