Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Hong-Ro Lee

Sang-Jo Lee

Chang-Mo Park

Yo-Sub Ko

Beung-Hwa Jeong

Oh-Seob Kwon

Hyun-Gue Kim

Je-Kil Ryu

Keun-Ho Jang

Sung-Hoon Hong

A method for manufacturing a flexible display device includes forming a separation layer on a carrier substrate, laminating a flexible substrate having an area that is larger than an area of the separation layer, to the separation layer; forming a dummy pattern on and along an edge of the flexible substrate; exposing a portion of the separation layer by removing a portion of the flexible substrate at a side of the flexible substrate; and separating the separation layer and the flexible substrate from each other.

Method for manufacturing flexible display device

A method of manufacturing a flexible display device, the method including depositing a separation layer on a supporting substrate; depositing a display panel on the separation layer; cutting the display panel to have a predetermined shape; cutting the supporting substrate and the separation layer to have a wider area than an area where the display panel, that is cut with the predetermined shape, contacts the supporting substrate and the separate layer; and separating the separate layer and the display panel from each other.

Manufacturing method for flexible display device

An organic light emitting diode (OLED) display device and a method of fabricating the same is provided. Semiconductor layers of driving transistors located in two adjacent pixels included in the OLED display device may extend in different lengthwise directions. Thus, striped stains of the OLED display device can be improved.

Organic light emitting diode display device and method of fabricating the same

A thin film transistor and a fabrication method thereof, in which one excimer laser annealing (ELA) makes a pixel portion and a driver portion different from each other in surface roughness and grain size. The thin film transistor includes: a substrate including a pixel portion and a driver portion; a first semiconductor layer disposed in the pixel portion and having a first surface roughness; and a second semiconductor layer disposed in the driver portion and having a second surface roughness smaller than the first surface roughness.

Thin film transistors in pixel and driving portions characterized by surface roughness

A silicon crystallization system includes a vibration device for vibrating a linear laser beam along a longer-axis direction of the linear laser beam. A vibration frequency at which the laser beam is vibrated is periodically generated and randomly changes within a predetermined range.

Silicon crystallization system and silicon crystallization method using laser

A thin film transistor and a fabrication method thereof, in which one excimer laser annealing (ELA) makes a pixel portion and a driver portion different from each other in surface roughness and grain size. The thin film transistor includes: a substrate including a pixel portion and a driver portion; a first semiconductor layer disposed in the pixel portion and having a first surface roughness; a second semiconductor layer disposed in the driver portion and having a second surface roughness smaller than the first surface roughness; a gate insulating layer formed on the substrate including the first and second semiconductor layers; a first gate electrode placed to correspond to the first semiconductor layer on the gate insulating layer; a second gate electrode placed to correspond to the second semiconductor layer on the gate insulating layer; an interlayer insulating layer formed on the substrate including the first and second gate electrodes; first source and drain electrodes formed on the interlayer insulating layer and electrically connected with the first semiconductor layer; and second source and drain electrodes formed on the interlayer insulating layer and electrically connected with the second semiconductor layer.

Thin film transistors in pixel and driver portions characterized by surface roughness

A method of measuring a degree of crystallinity of a polycrystalline silicon substrate includes obtaining a Raman spectrum graph by irradiating a polycrystalline silicon substrate with a laser beam; and calculating a degree of crystallinity of the polycrystalline silicon substrate from the Raman spectrum graph using the following formula: (degree of crystallinity)=(area of polycrystalline peak)/[(area of amorphous peak)+(area of polycrystalline peak)].

Method of measuring degree of crystallinity of polycrystalline silicon substrate, method of fabricating organic light emitting display using the same, and organic light emitting display fabricated using the same

Disclosed are a light emitting display and a method for fabricating the same. The light emitting display includes a substrate. A thin film transistor is formed on a first region of the substrate, and includes a semiconductor layer, a gate electrode, and source/drain electrodes. An organic light emitting diode is electrically coupled to the thin film transistor and includes a first electrode, an emission layer, and a second electrode. A dummy pixel, formed in a second region of the substrate, includes at least one dummy pattern. The dummy pattern is formed of the same material as that of one of the semiconductor layer, the gate electrode, the source/drain electrodes, and the first electrode.

Light emitting display device having a dummy pixel and method for fabricating the same

A laser annealing apparatus is provided, which can simultaneously process a plurality of moving semiconductor devices in an inline manner using one annealing laser. The apparatus may include a laser beam emitting unit, which emits laser beams to target regions of a to-be-processed object. Also included may be a plurality of first nozzles and a plurality of second nozzles, through which gas used for controlling an atmosphere of the target regions of the to-be-processed object is introduced or exhausted. The first and second nozzles may face each other so that the laser beams emitted from the laser beam emitting unit fall therebetween. The apparatus may further include a moving unit, which horizontally moves the to-be-processed object, to which the laser beams are emitted, at approximately the same transport speed.

Laser annealing apparatus for processing semiconductor devices in inline manner

A method for manufacturing a thin film transistor having a more uniform threshold voltage, and a flat panel display device that includes the thin film transistor. The method includes forming an amorphous silicon film on a substrate, removing a silicon oxide layer from a surface of the amorphous silicon film, forming a silicon oxide layer on the surface of the amorphous silicon film, and forming a polycrystalline Si layer by crystallizing the amorphous silicon film.

Method of manufacturing thin film transistor having polycrystalline silicon layer, thin film transistor manufactured using the method and flat panel display comprising the thin film transistor

Growing community of inventors

Yongin, South Korea

Hong-Ro Lee