Luminus Devices, Inc.

Bae Systems Information and Electronic Systems Integration Inc.

Hong Lu

Scott W Duncan

Hao Zhu

Michael Hong Lim

Michael Gregory Brown

Feng Yun

Ravi Rajan

John Woodhouse

Yves Bertic

Vanessa Christie

Alexei A Erchak

Andrew Anthony Szczepanowski

Kanin Chu

Daniel Charles Boire

Junichi Yoshitomi

Bernard J Schmanski

Warren P Pumyea

Carlton T Creamer

Kenta Maruyama

Techniques and architecture are disclosed for a method for making a custom circuit comprising forming a common wafer template, selecting at least two elements of the common wafer template to be chosen elements, and adding at least one metal layer to interconnect the chosen elements to form a circuit. The common wafer template includes a plurality of transistors, a plurality of resistors, a plurality of capacitors, and a plurality of bond pads. Final circuit customization of the common wafer template is accomplished by adding at least one metal layer that forms interconnects to passive and active elements in the template in order to complete the circuit.

Flexible impedance network system

Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Electronic device contact structures

Wavelength converting light-emitting devices and methods of making the same are provided. In some embodiments, the devices include a phosphor material region designed to convert the wavelength of emitted light.

Wavelength converting light-emitting devices and methods of making the same

The present invention relates to systems and methods associated with selective wet etching and textured surface planarization. The systems and methods described herein can be used to etch a component of a multi-layer stack, such as a GaN layer. In some embodiments, the multi-layer stack can include a substrate having a patterned surface and a light generating region. The substrate can be removed from the first multi-layer stack to form a second multi-layer stack. In some embodiments, the pattern on the surface of the substrate can leave behind a pattern on a surface of the second multi-layer stack. Accordingly, in some cases, the surface of the second multi-layer stack can be wet etched, for example, to smoothen the surface. In some embodiments, removing the substrate can expose an N-face of a GaN layer, and the wet etch can be performed such that the N-face of the GaN layer is etched. In some embodiments, the multi-layer stack includes a light generating region and can be part of a light emitting device.

Selective wet etching and textured surface planarization processes

Handle for a razor

Light-emitting devices are described herein. Some embodiments relate to light-emitting diodes with light-emitting sections that are independently electrically addressable. The devices may be used in a variety of applications including illumination and general lighting.

Light-emitting device including independently electrically addressable sections

Growing community of inventors

Wayland, MA, United States of America

Hong Lu