Samsung Display Co., Ltd.

Hong Long Ning

Chang-Oh Jeong

Byeong-Beom Kim

Joon Yong Park

Chang Oh Jeong

Chong-Chul Chai

Hyung Jun Kim

Sang-Gab Kim

Joo-Ae Youn

Sang Won Shin

Ji-Young Park

Yang-Ho Bae

Jin-Su Byun

Pil-Sang Yun

Dong Min Lee

Sung-Haeng Cho

Kyung Seop Kim

Byeong Beom Kim

Yeon-Hong Kim

Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.

Thin film transistor array panel and display device including the same

A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

Thin film transistor array panel

A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor ('TFT') connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.

Display panel

Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.

Thin-film transistor substrate and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Hong Long Ning