Phison Electronics Corporation

Hong-Lipp Ko

Chien-Hua Chu

Teng-Chun Hsu

Kheng-Joo Tan

Po-Ting Chen

Chia-Hung Chien

Te-Chang Tsui

Kuo-Lung Lee

Chih-Wei Tsai

A data reading method, a memory storage device and a memory controlling circuit unit are provided. The method includes: receiving a first read command; setting a plurality of first read events in a multi trigger queue (MTQ) according to the first read command, wherein the first read events include a general read event and at least one cache read event; sending a first read command sequence according to at least one of the first read events and receiving first data from a rewritable non-volatile memory module; and if a decoding for the first data fails, resetting the MTQ, and sending at least one second read command sequence according to at least one second read event in the reset MTQ, wherein the at least one second read event includes at least one of the at least one cache reading event.

Data reading method, memory storage device and memory controlling circuit unit

A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: writing data into at least one first logical unit and at least one second logical unit, and the data includes first data and second data; storing first data into at least one first physical erasing unit and filling the first physical erasing unit with the first data; storing second data into at least one second physical erasing unit; determining whether a remaining space of each second physical erasing unit is less than a threshold; if the remaining space of one of the at least one second physical erasing unit is less than the threshold, selecting at least one fourth physical erasing unit from a spare area and writing the second data into the at least one second physical erasing unit and the at least one fourth physical erasing unit.

Data writing method, memory storage device and memory control circuit unit

A memory address management method, a memory controller, and a memory storage device are provided. The memory address management method includes: obtaining memory information of a rewritable non-volatile memory module and formatting logical addresses according to the memory information to establish a file system, such that an allocation unit of the file system includes a lower logical programming unit and an upper logical programming unit. Here, the memory information includes a programming sequence, the allocation unit starts with the lower logical programming unit and ends with the upper logical programming unit, and an initial logical address of a data region in the file system belongs to the lower logical programming unit. Accordingly, an access bandwidth of the memory storage device is expanded.

Memory address management method, memory controller and memory storage device

A method for programming data is provided for a memory storage device having a rewritable non-volatile memory module and a buffer memory. The method includes receiving a plurality of data including a first-type data and at least one second-type data, and a size of the first-type data is smaller than a data size threshold. The method includes temporarily storing the plurality of data into the buffer memory, and programming the first-type data and at least one part of the at least one second-type data stored in the buffer memory into a physical program unit set if it is determined that the plurality of data are complied with a predetermined condition. The method includes obtaining writing statuses of the first-type data and the at least one part of the at least one second-type data at the same time.

Memory storage device, memory controller thereof, and method for programming data thereof

A data writing method for writing data from a host system into a plurality of memory dies of a rewritable non-volatile memory storage apparatus is provided. The data writing method includes determining whether the data transmission interface of the host system complies with a first interface standard or a second interface standard. The data writing method also includes using a general mode to write the data into the memory dies when the data transmission interface of the host system complies with the first interface standard and using a power saving mode to write the data into the memory dies when the data transmission interface of the host system complies with the second interface standard. Accordingly, the data writing method can effectively prevent the stability of the rewritable non-volatile memory storage apparatus from reducing due to insufficient power supplied by the data transmission interface.

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Miaoli County, Taiwan

Hong-Lipp Ko