Korea Institute of Science and Technology

Hong Kyu Jang

Hyung Jin Jung

Won Kook Choi

Seok Keun Koh

An adhesive strength increasing method which does not need a bulky apparatus such as an ion implantation apparatus and prevent the characteristic of a material from being degraded by using a high level current ion of a low level energy, thus increasing an adhesive strength between a metal thin film and a glass substrate. In the present invention, a metal is deposited on a substrate an inert gas or a reactive gas having a predetermined energy is irradiatd to the deposited metal thin film, and then the metal thin film is sealed, thus increasing an adhesive strength between a metal thin film and a glass substrate.

Adhesive strength increasing method for metal thin film

An improved thin film deposition apparatus which is capable of easily increasing the temperature of a crucible using low electric power, for thus reducing the maintenance cost of the system, and fabricating a thin film having a constant characteristic by using a lower current density variation based on a distance, for thus increasing the reliability of a thin film device, whereby it is possible to fabricate a more compact product and to more easily maintain the system, which includes a heat shielding cylindrical chamber, a cylindrical chamber located within the heat shielding cylindrical chamber, a crucible section including a crucible and a heat filament arranged at an inner and lower portion of the cylindrical chamber, an ionization section having an anode and an ionization filament arranged in an upper portion inside the cylindrical chamber, and a magnet for enhancing an ionization efficiency, an upper and lower filament support for supporting the heater filament and the ionization filament, an upper and lower flange, to which the upper and lower filaments are fixed, arranged in the cylindrical chamber in order for the upper and lower filaments to be detachable, and a grounding plate extended from the heat shielding plate and the electromagnetic field blocking cylindrical chamber located at the upper direction of the crucible section and forming of an acceleration electrode system together with the upper flange.

Growing community of inventors

Seoul, South Korea

Hong Kyu Jang