Lg Display Co., Ltd.

Hong Koo Lee

Sang Hoon Jung

Tae Joon Ahn

Sung Ki Kim

Kwon Shik Park

A thin film transistor includes a semiconductor pattern disposed on a substrate and a semiconductor pattern portion with a conductive or nonconductive characteristic, and a anti-diffusion portion on a side of the semiconductor pattern portion to prevent metal ions from being diffused along the semiconductor pattern portion. A first insulating layer covers the semiconductor pattern and has a first contact hole exposing a first region of the semiconductor pattern portion and a second contact hole exposing a second region of the semiconductor pattern portion. A gate electrode is disposed on the first insulating layer. A second insulating layer covers the gate electrode and has a third contact hole exposing the first region and a fourth contact hole exposing the second region. A source electrode is formed on the second insulating layer and connected to the first region, and a drain electrode is formed on the second insulating layer and connected to the second region.

Thin film transistor with anti-diffusion area that prevents metal atoms and/or ions from source/drain electrodes from shortening the channel length and display substrate having the thin film transistor

An organic light emitting diode display device and the driving method thereof that is adaptive for increasing display quality. The organic light emitting diode display device according to an embodiment includes a display panel where pixels having an organic light emitting diode device are arranged in a matrix type and a data driver that supplies a data voltage and an inverted voltage to the pixels, where the inverted voltage is symmetric to the data voltage relative to a reference voltage.

Organic light emitting diode display

A light emitting device comprises a first pixel portion that includes a light emitting portion arranged between two electrodes on a first substrate, a transistor portion formed on a second substrate arranged to be opposed to the first substrate, a connection electrode extended from one of the two electrodes, and an electrical contact portion in surface contact with both the connection electrode and a drain of the transistor portion.

Light emitting device

The pixel circuit of an organic light emitting display includes a first transistor to a seventh transistor, a first capacitor, a second transistor and an organic light emitting diode. The first capacitor stores the data signal from the first, second and third transistors, and the second capacitor stores the threshold voltage of the fourth transistor from the fifth transistor. Voltages stored in the first and second capacitors are combined by the sixth transistor, and the fourth transistor generates a driving current corresponding to a combined voltage of the voltages stored in the first and second capacitor. The seventh transistor transmits the driving current and the organic light emitting diode emits light corresponding to the driving current.

Pixel circuit of organic light emitting display

The present invention relates to an array substrate for a flat display device and a method for fabricating the same, in which a number of masks is reduced for reducing a cost and improving a device performance. The array substrate includes a gate electrode formed on an insulating substrate, a gate insulating film formed on an entire surface of the insulating substrate including the gate electrode, an active layer formed on the gate insulating film opposite to the gate electrode having a stack of a polysilicon layer and an amorphous silicon layer each having a width greater than the gate electrode, a source electrode and a drain electrode separated from each other at a portion of the active layer and formed over the active layer with an ohmic contact layer disposed therebetween, an interlayer insulating film formed on an entire surface of the insulating substrate having a contact hole to expose a predetermined portion of the drain electrode, and a pixel electrode connected to the drain electrode through the contact hole.

Array substrate for flat display device and method for fabricating the same

A thin film transistor includes a semiconductor pattern on a substrate, a gate insulating film to cover the semiconductor pattern, a gate electrode partially overlapping the semiconductor pattern with the gate insulating film there between, a hole in the gate electrode to expose the gate insulating film, an interlayer insulating film to cover the gate electrode, and a source electrode and a drain electrode contacting the semiconductor pattern through the interlayer insulating layer and the gate insulating layer, wherein the semiconductor pattern includes at least two channels between the source electrode and the drain electrode, the at least two channels having a region with a varying width.

Thin film transistor and organic electro-luminescence display device using the same

A thin film transistor array substrate and a fabricating method for simplifying a process and reducing a manufacturing cost. In the thin film transistor array substrate, a gate line is formed on a substrate and a gate insulating film is formed on the gate line. A data line is provided in such a manner to intersect the gate line with having the gate insulating film therebetween, and contains any at least one of tungsten silicide (WSi), cobalt silicide (CoSi) and nickel silicide (NiSi). A thin film transistor is provided at each intersection between the gate line and the data line. A pixel electrode is provided at a pixel area defined by each intersection between the gate line and the data line and is connected to the thin film transistor.

Growing community of inventors

Incheon, South Korea

Hong Koo Lee