Samsung Electronics Co., Ltd.

Hansol Chemical Co., Ltd.

Hong-Ki Kim

Yun-Ki Lee

Hye-Jung Kim

Kyung-Duck Lee

Jung-Sik Choi

Jung-Ho Lee

Dong-Jun Lee

Sang-Mun Chon

Ho-Kyu Kang

Dae-Won Kang

Seok-Jun Won

Jung-Woo Park

Yong-Kuk Jeong

Jae-Hee Oh

Jin-Man Kim

Duck-hyung Lee

Duck-Hyung Lee

June-Taeg Lee

Hyun-pil Noh

Moon-Han Park

Jae-Hee Choi

Mi-Ra Park

Myong-geun Yoon

Chang-sik Choi

Sang-Tae Lee

Byung-Kyu Kim

Jun-Hyuck Kwon

Kyung-Hun Kim

Kwan-Young Youn

An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Image sensor and manufacturing method thereof

The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.

Precursor for vapor deposition having excellent thermal stability and preparing method thereof

A portable terminal employing a near field communication antenna with a heat radiation function is provided. The portable terminal includes a cover provided for the portable terminal, and an antenna device mounted on an inner surface of the cover. The antenna device includes a near field communication antenna coupled to a location on the inner surface of the cover, a shield sheet coupled to an upper surface of the antenna, a heat radiation sheet coupled to an upper surface of the shield sheet so as to discharge heat transmitted from the portable terminal, and a protection cover coupled to an upper surface of the heat radiation sheet.

Heat radiation antenna device, portable terminal and battery cover therewith, and method for manufacturing the battery cover

Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.

Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor

An image sensor and a method of manufacturing the same are provided. The image sensor includes a substrate having a sensor array area and a peripheral circuit area a first insulating film structure formed on the peripheral circuit area and including a plurality of first multi-layer wiring lines and a second insulating film structure formed on the sensor array area and including a plurality of second multi-layer wiring lines. The uppermost-layer wiring line of the plurality of first multi-layer wiring lines is higher than that of the uppermost-layer wiring line of the plurality of second multi-layer wiring lines. The first insulating film structure includes an isotropic etch-stop layer, and the second insulating film structure does not include the isotropic etch-stop layer.

Image sensor and method of manufacturing the same

A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Capacitor for a semiconductor device and method of fabricating same

A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula &#x2014;(SiHNH)&#x2014; wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

A MIM capacitor can be formed by forming an insulating layer on a source/drain region of a transistor. A first pattern is formed on the insulating layer. A recess is formed in the insulating layer using the first pattern, wherein the recess exposes the source/drain region. A first electrode layer is formed in the recess on the source/drain region. A dielectric layer and a second electrode layer are formed on the first electrode layer in the recess. A second pattern is formed on the second electrode layer. The MIM capacitor is formed by removing a portion of the second electrode and the dielectric layer using the second pattern.

Methods of forming MIM type capacitors by forming upper and lower electrode layers in a recess that exposes a source/drain region of a transistor and MIM capacitors so formed

A method of forming a semiconductor device comprising: sequentially forming a supporting layer and a sacrificial layer over a semiconductor substrate; forming an opening by patterning the sacrificial layer and the supporting layer; forming a bottom electrode covering the inner wall and the bottom of the opening; removing the sacrificial layer by a wet etch process; and forming a dielectric layer and an upper electrode on the bottom electrode and the supporting layer, wherein the sacrificial layer is formed of a material having a faster wet etch rate than the supporting layer.

Method of forming semiconductor device with capacitor

A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula &mdash;(SiH NH) &mdash; wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

A power supply device for supplying power to an electronic apparatus with a power saving mode includes a rectifier circuit for converting an AC input voltage Vin to a DC voltage, a boost circuit for boosting the DC voltage to a prescribed level, a power factor correction (PFC) circuit for correcting the power factor of the output voltage of the boost circuit according to a feedback voltage from the output of the boost circuit, and a disable circuit for disabling the power factor correction (PFC) circuit in a power saving mode, whereby the power consumption is prevented for a switching operation of the power factor correction (PFC) circuit in the power saving mode.

Power supply device and method with a power factor correction circuit

A power control device of a computer system uses a universal serial bus (USB) hub for power control of a display monitor. The power control device includes: a rectifying section for converting an AC power of the display device into a DC voltage; a main SMPS (Switching Mode Power Supply) for supplying power to the display monitor after the DC voltage is switched and rectified; a microcomputer for determining the status of a power save mode to control the switching operation of the main SMPS; an auxiliary SMPS for supplying the power to the microcomputer when no power has been supplied from the USB hub; an auxiliary OFF controller for interrupting the operation of the auxiliary SMPS when the power has been applied from the USB hub; and an OFF controller for interrupting the operation of the main SMPS to execute a power OFF mode according to a DPMS.

Growing community of inventors

Hwaseong-si, South Korea

Hong-Ki Kim