Kopin Corporation

Hong K Choi

John C C Fan

Jagdish Narayan

Bor-Yeu Tsaur

Tchang-Hun Oh

Jason Lo

Jinlin Ye

Jyh Chia Chen

Shirong Liao

Christopher Iain Parkinson

John Gassel

Schang-Jing Hon

Jyh-Chia Chen

Steve Tchang-Hun Oh

Ken Fox

Boryeu Tsaur

Apparatuses, systems, and methods are described to enhance images rendered on an Organic Light Emitting Diode (OLED) display. An OLED device is formed with a first light emitting OLED stack, a charge generating layer (CGL), a second light emitting OLED stack, and a color filter. An OLED display pixel includes three sub-pixels where each subpixel is fabricated with a separate anode and a color filter. A dielectric barrier is disposed between the separate anodes and around the perimeter of each separate anode of the three sub-pixels. When current flows to a desired sub-pixel of the three sub-pixels, lateral current flow through the CGL to adjacent sub-pixels is impeded, resulting in light generation by the desired sub-pixel and reduction in unwanted light generation at sub-pixels adjacent to the desired sub-pixel. The OLED device can include micro lenses, which collimate light thereby reducing an aperture of emitted light to increase display brightness.

Image rendering in organic light emitting diode (OLED) displays, apparatuses, systems, and methods

Connections, software programming and interaction between a smart phone and a Head Mounted Display (HMD) or other video eyewear to improve user experience. The signal from an accelerometer and/or a touch screen in a smart phone is used only for certain control of an application program, such as to steer a racing car or a plane or to move a game persona character within a virtual space. The main scene for the game is displayed in the HMD and not the smart phone screen. One or more inputs from the HMD such as a head tracker or camera, are connected to the smart phone either via a wire or wirelessly such as via WiFi or Bluetooth. The head tracking and/or camera inputs are used as another input to the game, such as to pan/zoom or change the viewpoint of the user. In a still further implementation, the HMD also can have an integrated processor to make it a 'smart' HMD. The game can take advantage of the processing power in such a smart HMD, to implement functions such as side-by-side video processing to provide 3D video to the user.

Video eyewear for smart phone games

A liquid crystal display comprises a display panel that includes at least one pixel transistor, at least one pixel electrode in electrical communication with the pixel transistor, at least one common electrode, and a liquid crystal material between the pixel electrode and the common electrode. The pixel transistor includes a thin film layer of essentially single crystal silicon that has a thickness in a range of between about 100 nm and about 200 nm. The pixel electrode has a thickness in a range of between about 5 nm and about 20 nm. The common electrode has a thickness of between about 50 nm and about 200 nm.

Display system with single crystal Si thin film transistors

Display system with single crystal SI thin film transistors

A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.

Bonding pad for gallium nitride-based light-emitting devices

A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

Bonding pad for gallium nitride-based light-emitting device

An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Efficient light emitting diodes and lasers

A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

Light-emitting diode device geometry

An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

Electrode for p-type gallium nitride-based semiconductors

Compound semiconductor material is irradiated with x-ray radiation to activate a dopant material. Active carrier concentration efficiency may be improved over known methods, including conventional thermal annealing. The method may be employed for III-V group compounds, including GaN-based semiconductors, doped with p-type material to form low resistivity p-GaN. The method may be further employed to manufacture GaN-based LEDs, including blue LEDs, having improved forward bias voltage and light-emitting efficiency.

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Sharon, MA, United States of America

Hong K Choi