Samsung Electronics Co., Ltd.

Hong-jun Jin

Youngseok Lee

Chungman Kim

Wonyoung Choi

Yoon-gyu Song

Jong-mi Kim

A memory device according to an embodiment includes a memory cell array; a timing circuit configured to generate a first clock signal and a second clock signal, the second clock signal having a frequency that is i-times the frequency of the first clock signal; a command decoder configured to receive On-The-Fly (OTF) data including a plurality of OTF bits; a receiver configured to receive input data, sample the input data based on the first clock signal, and generate a first signal based on the sampled input data; a deserializer configured to generate a first deserialized signal from the first signal based on the second clock signal; a data pattern generator configured to generate a pattern signal based on the first deserialized signal and the OTF data based on the second clock signal; and a decoder configured to transmit the pattern signal to the memory cell array.

Memory device, memory device test method, and test system

A multi-socket guide for guiding a semiconductor package to a semiconductor package testing device includes a housing, a guiding unit disposed in the housing, the guiding unit guiding the housing to the semiconductor package testing device, and a mounting unit disposed in the housing, the mounting unit receiving the semiconductor package, wherein a size of the mounting unit corresponds to a size of a ball area of the semiconductor package.

Growing community of inventors

Suwon-si, South Korea

Hong-jun Jin