Samsung Display Co., Ltd.

Hong Jun Choi

Young In Hwang

Joo Hyeon Jo

Eung Taek Kim

Jin Suk Lee

Hwang Sup Shin

Jung Mi Choi

Na Lae Lee

Taek Geun Lee

Hee Seok Kim

Kohei Ebisuno

Tae Sik Kim

Suk Hoon Ku

Hee Yeon Kim

Jin Suk Seo

A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

Display device

A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

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Seoul, South Korea

Hong Jun Choi