Seoul Opto Device Co., Ltd.

Seoul Viosys Co., Ltd.

Samsung Heavy Ind. Co., Ltd

Hong Jae Yoo

Jae Bin Choi

Ki Bum Nam

Kyung Hee Ye

Joon Hee Lee

Chang Youn Kim

Hyo Shik Choi

Jun Ho Yun

Sung Hoon Hong

Hyung Ju Lee

Young Hwa Hong

Sun Kyu Park

Ok Jin Lim

Hee Won Lee

Sung Kug Park

A long-wavelength light emitting device is disclosed. The long-wavelength light emitting device comprises: a first conductive semi-conductor layer; an active layer that is located on the first conductive semi-conductor layer and that has a quantum well structure; and a second conductive semi-conductor layer that is located on the active layer. The active layer comprises: one or more well layers including a nitride-based semi-conductor having 21% or more In; two barrier layers located in upper and lower parts of the well layers, and located between the well layers and the barrier layers, wherein the upper capping layers have a bigger band-gap energy relative to the barrier layers, and the upper capping layers and the well layers are in contact.

High-efficiency long-wavelength light-emitting device

Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7&#xd7;10/cmand a thickness in the range of 5 to 10 um.

High efficiency light emitting diode

Disclosed herein are gallium nitride based light emitting diodes having interlayers with high dislocation density and a method of fabricating the same. The light emitting diode includes: a substrate; a buffer layer disposed on the substrate; an n-type contact layer disposed on the buffer; a p-type contact layer disposed on the n-type contact layer; an active layer interposed between the n-type contact layer and the p-type contact layer; a first lower semiconductor layer interposed between the buffer layer and the n-type contact layer; and a first interlayer interposed between the first lower semiconductor layer and the n-type contact layer, wherein the first interlayer has lower dislocation density than the buffer layer and higher dislocation density than the first lower semiconductor layer. This way, the interlayers with higher dislocation density prevent dislocations formed within the first lower semiconductor layer from being transferred to the n-type contact layer.

Light-emitting diode having an interlayer with high voltage density and method for manufacturing the same

Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

Group III nitride compound semiconductor device

Growing community of inventors

Ansan-si, South Korea

Hong Jae Yoo