Lg Display Co., Ltd.

Sony Corporation

Hong Jae Shin

Jong Sik Shim

Woo Jin Nam

Min Kyu Chang

Naofumi Ohashi

Jung Hyun Lee

Isao Matsumoto

Kaori Misawa

Atsushi Matsushita

Won Joon Ho

Kazuaki Inukai

Shuji Sone

Disclosed is a thin film transistor substrate which facilitates to improve output and transfer characteristics of thin film transistor, wherein the thin film transistor substrate comprises a thin film transistor comprising a lower gate electrode on a substrate, an active layer on the lower gate electrode, source and drain electrodes on the active layer, and an upper gate electrode on the source electrode, drain electrode and active layer, the upper gate electrode for covering a channel region defined by the source and drain electrodes; and a contact portion for electrically connecting the lower gate electrode with the upper gate electrode.

Thin film transistor substrate and method for manufacturing the same and organic light emitting device using the same

A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode.

Thin film transistor substrate having a thin film transistor having multiple top gates and organic light emitting device using the same

Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RIE dry etched sequentially, and a via is formed on the surface of a substrate for processing reaching the diffusion layer on the substrate for processing. Subsequent process consists of; removing a modified layer formed on the substrate for processing surface because of prior etching using plasma gas by plasma excitation of NHgas, and another etching for complete removal of the resist mask by irradiation of hydrogen active species created by hydrogen gas and inert gas, of which example is helium gas or argon gas.

Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device

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Seoul, South Korea

Hong Jae Shin