Tes Co., Ltd

Hong-Jae Lee

Don-Hee Lee

Woo-Pil Shim

Sung-Yean Yoon

Jong-Hwan Kim

Woo-Jin Lee

The present invention relates to a method for depositing a protection film of a light-emitting element, the method comprising the steps of: depositing a first protection layer on a light-emitting element of a substrate by means of the atomic layer deposition method; and depositing at least one additional protection layer on the first protection layer by means of the plasma-enhanced chemical vapor deposition method.

Method for depositing protection film of light-emitting element

The present invention relates to a passivation film deposition method for a light-emitting diode, comprising the steps of: depositing, on an upper part of a light-emitting diode of a substrate, a first passivation film having a silicon nitride (SiNx); and depositing, on an upper part of the first passivation film, a second passivation film having a silicon oxide (SiOx), wherein the ratio of the thickness of the first passivation film to the thickness of the second passivation film is 0.2-0.4:1.

Passivation film deposition method for light-emitting diode

The present invention relates to a method of depositing a protection film for a light-emitting element, the method comprising the steps of: depositing a first inorganic protection layer on a light-emitting element on a substrate; and depositing a second inorganic protection layer, having comparatively smaller internal stress than the first inorganic protection layer, on the first inorganic protection layer.

Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the crystalline silicon wafer, a transparent conductive film provided on a surface of the at least one amorphous silicon layer, electrodes provided on a surface of the transparent conductive film and a division unit to divide the transparent conductive film into a current-carrying region and a non-current-carrying region, wherein the current-carrying region is electrically connected to the electrodes and the non-current-carrying region is electrically disconnected from the electrodes.

Growing community of inventors

Gyeonggi-do, South Korea

Hong-Jae Lee