Skhynix Inc.

Hong Ik Kim

Cheol Kyu Bok

Keun Do Ban

Jung Gun Heo

Jong Cheon Park

Young Sik Kim

A method of forming fine patterns includes forming pillars arrayed in rows and columns on an underlying layer and forming a spacer layer on the underlying layer to cover the pillars. Portions of the spacer layer respectively covering the pillars arrayed in each row or in each column are in contact with each other to provide first interstitial spaces disposed between the pillars arrayed in a diagonal direction between a row direction and a column direction as well as to provide cleavages at corners of each of the first interstitial spaces in a plan view. A healing layer is formed on the spacer layer to fill the cleavages of the first interstitial spaces. The healing layer is formed to provide second interstitial spaces respectively located in the first interstitial spaces as well as to include a polymer material.

Methods of forming fine patterns

A method includes forming a template portion to provide a first opening trench portion surrounding a first isolated pattern, and forming an array of pillars on an underlying layer; forming a separation wall layer including first separation wall portions surrounding sidewalls of the pillars, and forming second separation wall portions covering sidewalls of the first opening trench portion; forming a block copolymer layer on the separation wall layer; forming first domains in gaps between the pillars, and forming second domains surrounding and separating the first domains by annealing the block copolymer layer; forming second openings by selectively removing the first domains; forming third openings between the second openings, and forming a fourth opening adjacent to the first isolated pattern by selectively removing the pillars and the template portion; and forming fifth openings, which extend from the second and third openings and penetrate the underlying layer, and forming a sixth opening, which extends from the fourth opening and penetrates the underlying layer.

Methods of forming different sized patterns

A method of forming patterns includes forming an array of pillars on an underlying layer stacked on an etch target layer, forming a separation wall layer on the pillars to provide separation walls covering sidewalls of the pillars, forming a block copolymer layer on the separation wall layer, annealing the block copolymer layer to form first domains located between the pillars, and a second domain surrounding and isolating the first domains, selectively removing the first domains to form second openings, selectively removing the pillars to form fourth openings, forming fifth openings that extend from the second and fourth openings to penetrate the underlying layer, forming a sealing pattern that covers and seals dummy openings among the fifth openings, and forming seventh openings that extend from the fifth openings exposed by the sealing pattern to penetrate the etch target layer.

Methods of forming patterns

A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.

Methods of forming patterns with block copolymer

Methods of forming patterns includes guide patterns on a neutral layer. A self-assembling block copolymer (BCP) layer on the guide patterns and the neutral layer. By annealing the self-assembling BCP layer, first polymer block domains and second polymer block domains are formed The guide patterns are formed of a developable antireflective material. The neutral layer is formed of a cross-linked polymeric material.

A method of forming patterns includes: forming guide patterns on an underlying layer, forming a self-assembling block copolymer (BCP) layer on the guide patterns and the underlying layer, annealing the self-assembling BCP layer to form first polymer block domains and second polymer block domains which are alternately and repeatedly arrayed, and selectively removing the first polymer block domains. The guide patterns are formed of a developable antireflective material. In addition, the guide patterns are spaced apart from each other such that a width of each of the guide patterns is less than a distance between the guide patterns.

Growing community of inventors

Gyeonggi-do, South Korea

Hong Ik Kim